Low-threshold, mirrorless emission at 981nm in an Yb,Gd,Lu:KYW inverted rib waveguide laser
Low-threshold, mirrorless emission at 981nm in an Yb,Gd,Lu:KYW inverted rib waveguide laser
In this work, we demonstrate 3-level laser operation in a Yb,Gd,Lu:KYW waveguide laser fabricated by combination of liquid phase epitaxy and Ar+ ion beam milling. Laser emission was observed at 981 nm with an absorbed threshold power of 23 mW and a slope efficiency of 58% without the use of any mirrors. With an HR/6%T cavity, the threshold was reduced to 13 mW. The output was single mode with beam radii of 4.8 µm and 3 µm in the in-plane and out-of-plane direction respectively. Laser emission was also observed at 999.8 nm with a threshold of 8 mW by using mirrors favouring the 999.8 nm transition and forming an HR/5%T cavity.
Choudhary, Amol
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Bolaños, W.
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Pradeesh, Kannan
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Carvajal, J.J.
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Aguiló, M.
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Díaz, F.
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Shepherd, D.P.
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Choudhary, Amol
a5540b54-f153-43e4-a59a-e3ed9360904b
Bolaños, W.
6a231bc6-0e44-4761-97b0-fb34319c1f39
Pradeesh, Kannan
d264c1f5-cbaf-42ac-a939-10fce00fa5cb
Carvajal, J.J.
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Aguiló, M.
61fe554a-22ea-43db-9fd3-8d3209bf99ed
Díaz, F.
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Shepherd, D.P.
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Choudhary, Amol, Bolaños, W., Pradeesh, Kannan, Carvajal, J.J., Aguiló, M., Díaz, F. and Shepherd, D.P.
(2013)
Low-threshold, mirrorless emission at 981nm in an Yb,Gd,Lu:KYW inverted rib waveguide laser.
Photonics West, San Francisco, United States.
02 - 07 Feb 2013.
(doi:10.1117/12.2001832).
Record type:
Conference or Workshop Item
(Paper)
Abstract
In this work, we demonstrate 3-level laser operation in a Yb,Gd,Lu:KYW waveguide laser fabricated by combination of liquid phase epitaxy and Ar+ ion beam milling. Laser emission was observed at 981 nm with an absorbed threshold power of 23 mW and a slope efficiency of 58% without the use of any mirrors. With an HR/6%T cavity, the threshold was reduced to 13 mW. The output was single mode with beam radii of 4.8 µm and 3 µm in the in-plane and out-of-plane direction respectively. Laser emission was also observed at 999.8 nm with a threshold of 8 mW by using mirrors favouring the 999.8 nm transition and forming an HR/5%T cavity.
More information
e-pub ahead of print date: February 2013
Additional Information:
8599-4
Venue - Dates:
Photonics West, San Francisco, United States, 2013-02-02 - 2013-02-07
Organisations:
Optoelectronics Research Centre
Identifiers
Local EPrints ID: 367838
URI: http://eprints.soton.ac.uk/id/eprint/367838
PURE UUID: c6f4ceaf-da31-4f14-a240-afd954e89193
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Date deposited: 06 Sep 2014 15:46
Last modified: 15 Mar 2024 02:40
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Contributors
Author:
Amol Choudhary
Author:
W. Bolaños
Author:
Kannan Pradeesh
Author:
J.J. Carvajal
Author:
M. Aguiló
Author:
F. Díaz
Author:
D.P. Shepherd
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