X-ray photoelectron spectroscopy studies of thin GexSb40-xS6o films
Jiang, Liudi, Fitzgerald, A.G., Rose, M.J., Christova, K., Manov, A. and Pamukchieva, V. (2002) X-ray photoelectron spectroscopy studies of thin GexSb40-xS6o films. Journal of Non-crystalline Solids, 297, (1), 13-17. (doi:10.1016/S0022-3093(01)00925-5).
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Thin GexSb40-xS60 (x = 5, 15, 20, 25 and 27) chalcogenide films have been investigated by X-ray photoelectron spectroscopy (XPS). X-ray photoelectron spectra show that there is a peculiarity in the relative intensity ratio of the Sb 4d photoelectron peak associated with Sb2S3 to the Sb 4d photoelectron peak associated Sb2S5 at an average co-ordination number Z of 2.65-2.67. After contamination and photo-oxidation layers were removed from the surface of the films, X-ray photoelectron spectra were measured again. It has been found that binding energies of the Ge 2p and Sb 3d(3/2) photoelectron peaks, which reflect the electronic structure at lower core energy levels, are independent of Z. However, the binding energies of the Ge 3d and Sb 4d photoelectron peaks are more sensitive to Z and have a discontinuity at Z = 2.65.
|Subjects:||T Technology > T Technology (General)
Q Science > Q Science (General)
|Divisions:||University Structure - Pre August 2011 > School of Engineering Sciences
University Structure - Pre August 2011 > School of Engineering Sciences > Engineering Materials & Surface Engineering
|Date Deposited:||24 May 2006|
|Last Modified:||06 Aug 2015 02:32|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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