Ge-on-Si plasma enhanced chemical vapor deposition for low cost photodetectors
Ge-on-Si plasma enhanced chemical vapor deposition for low cost photodetectors
The development of low-thermal-budget Ge-on-Si epitaxial growth for the fabrication of low-cost Ge-on-Si devices is highly desirable for the field of silicon photonics. At present, most Ge-on-Si growth techniques require high growth temperatures, followed by cyclic annealing at temperatures >800 °C, often for a period of several hours. Here, we present a low-temperature (400 °C) low-cost plasma-enhanced chemical vapor deposition (PECVD) Ge-on-Si growth study and, subsequently, fabricate a high-speed zero-bias 12.5-Gb/s waveguide integrated photodetector with a responsivity of 0.1 A/W at a wavelength of 1550 nm. This low-energy device demonstrates the feasibility of the PECVD method for the fabrication of low-cost low-thermal-budget Ge-on-Si devices.
1-8
Littlejohns, C.G.
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Khokhar, A.Z.
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Thomson, D.J.
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Hu, Y.
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Basset, L.
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Reynolds, Scott
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Mashanovich, G.Z.
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Reed, G.T.
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Gardes, F.Y.
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August 2015
Littlejohns, C.G.
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Khokhar, A.Z.
2eedd1cc-8ac5-4f8e-be25-930bd3eae396
Thomson, D.J.
17c1626c-2422-42c6-98e0-586ae220bcda
Hu, Y.
38fe48b3-1609-4834-ad54-dc823e3a98b3
Basset, L.
dfb003de-2b08-4338-a9e2-d39df8e5a615
Reynolds, Scott
79120bae-f620-433a-9360-71973dbc4222
Mashanovich, G.Z.
c806e262-af80-4836-b96f-319425060051
Reed, G.T.
ca08dd60-c072-4d7d-b254-75714d570139
Gardes, F.Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
Littlejohns, C.G., Khokhar, A.Z., Thomson, D.J., Hu, Y., Basset, L., Reynolds, Scott, Mashanovich, G.Z., Reed, G.T. and Gardes, F.Y.
(2015)
Ge-on-Si plasma enhanced chemical vapor deposition for low cost photodetectors.
IEEE Photonics Journal, 7 (4), .
(doi:10.1109/JPHOT.2015.2456069).
Abstract
The development of low-thermal-budget Ge-on-Si epitaxial growth for the fabrication of low-cost Ge-on-Si devices is highly desirable for the field of silicon photonics. At present, most Ge-on-Si growth techniques require high growth temperatures, followed by cyclic annealing at temperatures >800 °C, often for a period of several hours. Here, we present a low-temperature (400 °C) low-cost plasma-enhanced chemical vapor deposition (PECVD) Ge-on-Si growth study and, subsequently, fabricate a high-speed zero-bias 12.5-Gb/s waveguide integrated photodetector with a responsivity of 0.1 A/W at a wavelength of 1550 nm. This low-energy device demonstrates the feasibility of the PECVD method for the fabrication of low-cost low-thermal-budget Ge-on-Si devices.
Text
Ge-on-Si Plasma Enhanced Chemical Vapor Deposition for Low Cost Photodetectors - Final Version.docx
- Author's Original
More information
Accepted/In Press date: 9 July 2015
e-pub ahead of print date: 13 July 2015
Published date: August 2015
Organisations:
Optoelectronics Research Centre
Identifiers
Local EPrints ID: 378979
URI: http://eprints.soton.ac.uk/id/eprint/378979
ISSN: 1943-0655
PURE UUID: 4e7bbae5-5587-4a1a-ae12-5c4bcefc58d0
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Date deposited: 21 Jul 2015 13:16
Last modified: 15 Mar 2024 03:40
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Contributors
Author:
A.Z. Khokhar
Author:
Y. Hu
Author:
L. Basset
Author:
Scott Reynolds
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