Electrically driven 8-14 micron band solid-state modulator


Lee, C.Y. and Rutt, H.N. (2006) Electrically driven 8-14 micron band solid-state modulator. In, EMRS-DTC Technical Conference 2006: Electro Magnetic Remote Sensing Defence Technology Centre 2006 Conference, Edinburgh, UK, 13 - 14 Jul 2006. Southampton, UK, University of Southampton. Optoelectronics Research Centre, 5pp.

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Description/Abstract

Simulation results for an electrically driven 8-14μm band, solid-state modulator based on a high purity germanium p-i-n diode are presented. Known carrier recombination mechanisms detrimental to device performance along with ways to reduce their effect are detailed.

Device simulations using 'ATLAS', indicate that modulation depths of up to 99.5% attenuation for incident infrared radiation centred at 10.6μm can be achieved by using ion-implanted device construction and optimisation of the design parameters. Preliminary transient analysis attained higher modulation frequency when transient large bias voltage (2V) is used momentarily during switching.

Item Type: Conference or Workshop Item (Paper)
Additional Information: Publication No: 3352
Related URLs:
Keywords: infrared, solid-state modulator, high purity germanium, p-i-n diode
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
Divisions: University Structure - Pre August 2011 > Optoelectronics Research Centre
ePrint ID: 38429
Date Deposited: 22 Jun 2006
Last Modified: 27 Mar 2014 18:24
URI: http://eprints.soton.ac.uk/id/eprint/38429

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