Novel electro-absorption modulator with germanium fins evanescently coupled to silicon waveguide
Novel electro-absorption modulator with germanium fins evanescently coupled to silicon waveguide
Electro-Absorption (EA) modulator is a promising candidate for the next generation devices in Si photonics with even lower power consumptions for short-reach optical interconnections. However, its relatively higher insertion loss must be addressed, and the efficient coupling from a Si waveguide to EA modulator is a challenging topic. Here, we propose, for the first time, to use novel Ge fin structures for EA modulators. An array of Ge fins evanescently coupled to a Si waveguide is used for the modulation by the Franz-Keldysh effect (FKE). We have designed this new EA modulator using Ge fins based on simulations.
Electro-absorption, absorption, Modulator, Evanescent, Silicon, Si, Waveguide, Ge, Germanium, Fin
Jiang, Zhiyuan
b140b0ff-e7a6-4c36-b808-f798fd466795
Debnath, Kapil
aa01749d-524b-4464-b90a-af072e92a02f
Reed, Graham
ca08dd60-c072-4d7d-b254-75714d570139
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Jiang, Zhiyuan
b140b0ff-e7a6-4c36-b808-f798fd466795
Debnath, Kapil
aa01749d-524b-4464-b90a-af072e92a02f
Reed, Graham
ca08dd60-c072-4d7d-b254-75714d570139
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Jiang, Zhiyuan, Debnath, Kapil, Reed, Graham and Saito, Shinichi
(2016)
Novel electro-absorption modulator with germanium fins evanescently coupled to silicon waveguide.
MRS Spring Meeting, Phoenix, United States.
(In Press)
Record type:
Conference or Workshop Item
(Paper)
Abstract
Electro-Absorption (EA) modulator is a promising candidate for the next generation devices in Si photonics with even lower power consumptions for short-reach optical interconnections. However, its relatively higher insertion loss must be addressed, and the efficient coupling from a Si waveguide to EA modulator is a challenging topic. Here, we propose, for the first time, to use novel Ge fin structures for EA modulators. An array of Ge fins evanescently coupled to a Si waveguide is used for the modulation by the Franz-Keldysh effect (FKE). We have designed this new EA modulator using Ge fins based on simulations.
More information
Accepted/In Press date: 12 January 2016
Venue - Dates:
MRS Spring Meeting, Phoenix, United States, 2016-01-12
Keywords:
Electro-absorption, absorption, Modulator, Evanescent, Silicon, Si, Waveguide, Ge, Germanium, Fin
Organisations:
Optoelectronics Research Centre, Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 387909
URI: http://eprints.soton.ac.uk/id/eprint/387909
PURE UUID: c65c7f5a-24b1-4d45-afe4-2a76b784fdf1
Catalogue record
Date deposited: 16 Feb 2016 16:41
Last modified: 15 Mar 2024 03:43
Export record
Contributors
Author:
Zhiyuan Jiang
Author:
Kapil Debnath
Author:
Shinichi Saito
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics