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Effects of surface passivation on top-down ZnO nanowire transistors

Effects of surface passivation on top-down ZnO nanowire transistors
Effects of surface passivation on top-down ZnO nanowire transistors
We fabricated unpassivated and passivated zinc oxide (ZnO) nanowire field effect transistors (NWFETs) using conventional top-down method of remote plasma atomic layer deposition and anisotropic dry etch. This paper investigates the effect of Al2O3 passivation on the electrical characteristics of the ZnO NWFETs. Measured unpassivated ZnO NWFETs show a threshold voltage of 6.5 V, drain current on/off ratio of 106 and field effect mobility of 31.4 cm2/V s. Passivated ZnO NWFETs demonstrate threshold voltage shift to -10 V, drain current on/off ratio of 104 and improvement of mobility of 35.5 cm2/V s. The passivated device results indicate suitability for biosensing applications.
depletion mod, field effect transistor, nanowire, remote plasma atomic layer deposition (rpald), passivation, zno
0167-9317
91-95
Ditshego, N.M.J.
4f543bd6-5bdd-4618-82e1-f6830bada12c
Sun, K.
0d89e1b1-78c6-44af-94aa-e9742efe28ad
Zeimpekis, I.
a2c354ec-3891-497c-adac-89b3a5d96af0
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
de Planque, M.R.R.
a1d33d13-f516-44fb-8d2c-c51d18bc21ba
Chong, H.M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1
Ditshego, N.M.J.
4f543bd6-5bdd-4618-82e1-f6830bada12c
Sun, K.
0d89e1b1-78c6-44af-94aa-e9742efe28ad
Zeimpekis, I.
a2c354ec-3891-497c-adac-89b3a5d96af0
Ashburn, P.
68cef6b7-205b-47aa-9efb-f1f09f5c1038
de Planque, M.R.R.
a1d33d13-f516-44fb-8d2c-c51d18bc21ba
Chong, H.M.H.
795aa67f-29e5-480f-b1bc-9bd5c0d558e1

Ditshego, N.M.J., Sun, K., Zeimpekis, I., Ashburn, P., de Planque, M.R.R. and Chong, H.M.H. (2015) Effects of surface passivation on top-down ZnO nanowire transistors. Microelectronic Engineering, 145, 91-95. (doi:10.1016/j.mee.2015.03.013).

Record type: Article

Abstract

We fabricated unpassivated and passivated zinc oxide (ZnO) nanowire field effect transistors (NWFETs) using conventional top-down method of remote plasma atomic layer deposition and anisotropic dry etch. This paper investigates the effect of Al2O3 passivation on the electrical characteristics of the ZnO NWFETs. Measured unpassivated ZnO NWFETs show a threshold voltage of 6.5 V, drain current on/off ratio of 106 and field effect mobility of 31.4 cm2/V s. Passivated ZnO NWFETs demonstrate threshold voltage shift to -10 V, drain current on/off ratio of 104 and improvement of mobility of 35.5 cm2/V s. The passivated device results indicate suitability for biosensing applications.

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Submitted date: 29 October 2014
Accepted/In Press date: 10 March 2015
e-pub ahead of print date: 20 March 2015
Published date: 1 September 2015
Keywords: depletion mod, field effect transistor, nanowire, remote plasma atomic layer deposition (rpald), passivation, zno
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 389688
URI: http://eprints.soton.ac.uk/id/eprint/389688
ISSN: 0167-9317
PURE UUID: 5443c16d-1ac4-4075-961a-e84d40fdae9b
ORCID for I. Zeimpekis: ORCID iD orcid.org/0000-0002-7455-1599
ORCID for M.R.R. de Planque: ORCID iD orcid.org/0000-0002-8787-0513
ORCID for H.M.H. Chong: ORCID iD orcid.org/0000-0002-7110-5761

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Date deposited: 14 Mar 2016 09:35
Last modified: 15 Mar 2024 03:38

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Contributors

Author: N.M.J. Ditshego
Author: K. Sun
Author: I. Zeimpekis ORCID iD
Author: P. Ashburn
Author: M.R.R. de Planque ORCID iD
Author: H.M.H. Chong ORCID iD

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