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Parametrically excited MEMS vibration energy harvester with design approaches to overcome the initiation threshold amplitude

Parametrically excited MEMS vibration energy harvester with design approaches to overcome the initiation threshold amplitude
Parametrically excited MEMS vibration energy harvester with design approaches to overcome the initiation threshold amplitude
Resonant-based vibration harvesters have conventionally relied upon accessing the fundamental mode of directly excited resonance to maximize the conversion efficiency of mechanical-to-electrical power transduction. This paper explores the use of parametric resonance, which unlike the former, the resonant-induced amplitude growth, is not limited by linear damping and wherein can potentially offer higher and broader nonlinear peaks. A numerical model has been constructed to demonstrate the potential improvements over the convention. Despite the promising potential, a damping-dependent initiation threshold amplitude has to be attained prior to accessing this alternative resonant phenomenon. Design approaches have been explored to passively reduce this initiation threshold. Furthermore, three representative MEMS designs were fabricated with both 25 and 10 µm thick device silicon. The devices include electrostatic cantilever-based harvesters, with and without the additional design modification to overcome initiation threshold amplitude. The optimum performance was recorded for the 25 µm thick threshold-aided MEMS prototype with device volume ~0.147 mm3. When driven at 4.2 ms-2, this prototype demonstrated a peak power output of 10.7 nW at the fundamental mode of resonance and 156 nW at the principal parametric resonance, as well as a 23-fold decrease in initiation threshold over the purely parametric prototype. An approximate doubling of the half-power bandwidth was also observed for the parametrically excited scenario.
0960-1317
1-10
Jia, Yu
12182124-55e3-47c1-991a-228d6edc85ee
Yan, Jize
786dc090-843b-435d-adbe-1d35e8fc5828
Soga, Kenichi
e43028e3-af4d-4ea4-a747-6cc6dacc849b
Seshia, Ashwin A.
6fe2b5b5-e451-41e2-a23a-601c9faf7d8a
Jia, Yu
12182124-55e3-47c1-991a-228d6edc85ee
Yan, Jize
786dc090-843b-435d-adbe-1d35e8fc5828
Soga, Kenichi
e43028e3-af4d-4ea4-a747-6cc6dacc849b
Seshia, Ashwin A.
6fe2b5b5-e451-41e2-a23a-601c9faf7d8a

Jia, Yu, Yan, Jize, Soga, Kenichi and Seshia, Ashwin A. (2013) Parametrically excited MEMS vibration energy harvester with design approaches to overcome the initiation threshold amplitude. Journal of Micromechanics and Microengineering, 23 (11), 1-10. (doi:10.1088/0960-1317/23/11/114007).

Record type: Article

Abstract

Resonant-based vibration harvesters have conventionally relied upon accessing the fundamental mode of directly excited resonance to maximize the conversion efficiency of mechanical-to-electrical power transduction. This paper explores the use of parametric resonance, which unlike the former, the resonant-induced amplitude growth, is not limited by linear damping and wherein can potentially offer higher and broader nonlinear peaks. A numerical model has been constructed to demonstrate the potential improvements over the convention. Despite the promising potential, a damping-dependent initiation threshold amplitude has to be attained prior to accessing this alternative resonant phenomenon. Design approaches have been explored to passively reduce this initiation threshold. Furthermore, three representative MEMS designs were fabricated with both 25 and 10 µm thick device silicon. The devices include electrostatic cantilever-based harvesters, with and without the additional design modification to overcome initiation threshold amplitude. The optimum performance was recorded for the 25 µm thick threshold-aided MEMS prototype with device volume ~0.147 mm3. When driven at 4.2 ms-2, this prototype demonstrated a peak power output of 10.7 nW at the fundamental mode of resonance and 156 nW at the principal parametric resonance, as well as a 23-fold decrease in initiation threshold over the purely parametric prototype. An approximate doubling of the half-power bandwidth was also observed for the parametrically excited scenario.

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Published date: 25 October 2013
Organisations: Nanoelectronics and Nanotechnology

Identifiers

Local EPrints ID: 393252
URI: http://eprints.soton.ac.uk/id/eprint/393252
ISSN: 0960-1317
PURE UUID: cfea2200-c6b2-4109-b423-0a88f5660fa1
ORCID for Jize Yan: ORCID iD orcid.org/0000-0002-2886-2847

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Date deposited: 25 Apr 2016 10:24
Last modified: 15 Mar 2024 03:53

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Contributors

Author: Yu Jia
Author: Jize Yan ORCID iD
Author: Kenichi Soga
Author: Ashwin A. Seshia

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