SPICE compact modeling of bipolar/unipolar memristor switching governed by electrical thresholds
SPICE compact modeling of bipolar/unipolar memristor switching governed by electrical thresholds
In this work we propose a physical memristor/resistive switching device SPICE compact model, that is able to accurately fit both unipolar/bipolar devices settling to its current-voltage relationship. The proposed model is capable of reproducing essential device characteristics such as multilevel storage, temperature dependence, cycle/event handling and even the evolution of variability/parameter degradation with time.
The developed compact model has been validated against two physical devices, fitting unipolar and bipolar switching. With no requirement of Verilog-A code, LTSpice and Spectre simulations reproduce distinctive phenomena such as the preforming state, voltage/cycle dependent
memristor, rram, reram, variability, rtn, degradation, spice, compact model, multi-level, circuit simulation, temperature
1255-1264
Garcia-Redondo, Fernando
74eee0d4-9c82-419c-af20-7388abe671f4
Gowers, Robert
35716eae-8c54-4dcf-800d-a08c6382dd1e
Crespo-Yepes, A.
72d6cb5a-3237-490f-8904-d1764936845d
Lopez-Vallejo, Marisa
fc13f9a0-0328-425a-8b5d-d03a05c8071e
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
13 July 2016
Garcia-Redondo, Fernando
74eee0d4-9c82-419c-af20-7388abe671f4
Gowers, Robert
35716eae-8c54-4dcf-800d-a08c6382dd1e
Crespo-Yepes, A.
72d6cb5a-3237-490f-8904-d1764936845d
Lopez-Vallejo, Marisa
fc13f9a0-0328-425a-8b5d-d03a05c8071e
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Garcia-Redondo, Fernando, Gowers, Robert, Crespo-Yepes, A., Lopez-Vallejo, Marisa and Jiang, Liudi
(2016)
SPICE compact modeling of bipolar/unipolar memristor switching governed by electrical thresholds.
IEEE Transactions on Circuits and Systems I: Regular Papers, 63 (8), .
(doi:10.1109/TCSI.2016.2564703).
Abstract
In this work we propose a physical memristor/resistive switching device SPICE compact model, that is able to accurately fit both unipolar/bipolar devices settling to its current-voltage relationship. The proposed model is capable of reproducing essential device characteristics such as multilevel storage, temperature dependence, cycle/event handling and even the evolution of variability/parameter degradation with time.
The developed compact model has been validated against two physical devices, fitting unipolar and bipolar switching. With no requirement of Verilog-A code, LTSpice and Spectre simulations reproduce distinctive phenomena such as the preforming state, voltage/cycle dependent
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Accepted/In Press date: 10 April 2016
Published date: 13 July 2016
Additional Information:
(c) 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.
Keywords:
memristor, rram, reram, variability, rtn, degradation, spice, compact model, multi-level, circuit simulation, temperature
Organisations:
Engineering Mats & Surface Engineerg Gp
Identifiers
Local EPrints ID: 394338
URI: http://eprints.soton.ac.uk/id/eprint/394338
ISSN: 1549-8328
PURE UUID: 85e83c76-ce4e-4d9f-bf78-0559cd135e57
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Date deposited: 18 May 2016 09:26
Last modified: 15 Mar 2024 05:34
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Contributors
Author:
Fernando Garcia-Redondo
Author:
Robert Gowers
Author:
A. Crespo-Yepes
Author:
Marisa Lopez-Vallejo
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