Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
Undoped ZnO thin films with tunable electrical properties have been achieved by adjusting the O2 plasma time in the plasma enhanced atomic layer deposition process. The structural, compositional and electrical properties of the deposited ZnO films were investigated by various characterization techniques. By tuning the plasma exposure from 2 to 8 s, both resistivities and carrier concentrations of the resultant ZnO films can be modulated by up to 3 orders of magnitude. Forming-free TiN/ZnO/TiN resistive memory devices have been achieved by choosing the ZnO film with the plasma exposure time of 6 s. This deposition method offers a great potential for producing other un-doped metal oxides with tunable properties as well as complex multilayer structures in a single deposition.
7-12
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Sun, Kai
b7c648a3-7be8-4613-9d4d-1bf937fb487b
Kiang, Kian S.
fdb609c6-75aa-4893-85c8-8e50edfda7fe
Morgan, Katrina A.
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
1 August 2016
Huang, Ruomeng
c6187811-ef2f-4437-8333-595c0d6ac978
Sun, Kai
b7c648a3-7be8-4613-9d4d-1bf937fb487b
Kiang, Kian S.
fdb609c6-75aa-4893-85c8-8e50edfda7fe
Morgan, Katrina A.
2b9605fc-ac61-4ae7-b5f1-b6e3d257701d
de Groot, C.H.
92cd2e02-fcc4-43da-8816-c86f966be90c
Huang, Ruomeng, Sun, Kai, Kiang, Kian S., Morgan, Katrina A. and de Groot, C.H.
(2016)
Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition.
Microelectronic Engineering, 161, .
(doi:10.1016/j.mee.2016.03.038).
Abstract
Undoped ZnO thin films with tunable electrical properties have been achieved by adjusting the O2 plasma time in the plasma enhanced atomic layer deposition process. The structural, compositional and electrical properties of the deposited ZnO films were investigated by various characterization techniques. By tuning the plasma exposure from 2 to 8 s, both resistivities and carrier concentrations of the resultant ZnO films can be modulated by up to 3 orders of magnitude. Forming-free TiN/ZnO/TiN resistive memory devices have been achieved by choosing the ZnO film with the plasma exposure time of 6 s. This deposition method offers a great potential for producing other un-doped metal oxides with tunable properties as well as complex multilayer structures in a single deposition.
Text
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Accepted/In Press date: 21 March 2016
e-pub ahead of print date: 7 April 2016
Published date: 1 August 2016
Organisations:
Optoelectronics Research Centre, Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 396538
URI: http://eprints.soton.ac.uk/id/eprint/396538
ISSN: 0167-9317
PURE UUID: bc0a1fa5-f2a8-4d4f-b1fc-2cb7b5db7cc6
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Date deposited: 10 Jun 2016 12:43
Last modified: 15 Mar 2024 05:39
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Contributors
Author:
Ruomeng Huang
Author:
Katrina A. Morgan
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