A numerical analysis of a MOCVD process for the growth of GaN nanowires using GaCl3 and NH3
A numerical analysis of a MOCVD process for the growth of GaN nanowires using GaCl3 and NH3
In this paper, the analysis of horizontal cold wall reactor for GaN nanowires growing from GaCl3 and NH3 at atmospheric pressure conditions has been studied. It aims to provide better understanding of the MOCVD process especially of deposition process of GaN nanowires as well as fluid dynamics inside the reactor. Numerical solution to transport model coupled with 2D geometry using CFD shows several results including GaCl3 thermal decomposition at different temperature conditions, velocity and temperature distribution as well as concentration profiles into reactor. Afterwards experimental parameters of temperature and gases flow were set to growth of GaN nanowires. Scanning electron microscopy analysis shows the microstructural characteristics of GaN nanowires.
389-393
Serrano Perez, Edgar
c4684fff-c5cc-4a39-a296-b430d1fc5e4b
Núñez-Velázquez, Martin
3c102956-ac51-4d02-9fe6-6628557cfbff
Juárez Lopez, Fernando
04afda9d-cf61-41b5-b04d-47b019deade2
April 2015
Serrano Perez, Edgar
c4684fff-c5cc-4a39-a296-b430d1fc5e4b
Núñez-Velázquez, Martin
3c102956-ac51-4d02-9fe6-6628557cfbff
Juárez Lopez, Fernando
04afda9d-cf61-41b5-b04d-47b019deade2
Serrano Perez, Edgar, Núñez-Velázquez, Martin and Juárez Lopez, Fernando
(2015)
A numerical analysis of a MOCVD process for the growth of GaN nanowires using GaCl3 and NH3.
Physica Status Solidi (c), 12 (4-5), .
(doi:10.1002/pssc.201400165).
Abstract
In this paper, the analysis of horizontal cold wall reactor for GaN nanowires growing from GaCl3 and NH3 at atmospheric pressure conditions has been studied. It aims to provide better understanding of the MOCVD process especially of deposition process of GaN nanowires as well as fluid dynamics inside the reactor. Numerical solution to transport model coupled with 2D geometry using CFD shows several results including GaCl3 thermal decomposition at different temperature conditions, velocity and temperature distribution as well as concentration profiles into reactor. Afterwards experimental parameters of temperature and gases flow were set to growth of GaN nanowires. Scanning electron microscopy analysis shows the microstructural characteristics of GaN nanowires.
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Accepted/In Press date: 20 January 2015
e-pub ahead of print date: 18 March 2015
Published date: April 2015
Organisations:
Optoelectronics Research Centre
Identifiers
Local EPrints ID: 398176
URI: http://eprints.soton.ac.uk/id/eprint/398176
ISSN: 1610-1634
PURE UUID: 0a6246f7-7143-41a3-acba-0e1ea0eae8ee
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Date deposited: 22 Jul 2016 08:52
Last modified: 15 Mar 2024 01:30
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Author:
Edgar Serrano Perez
Author:
Martin Núñez-Velázquez
Author:
Fernando Juárez Lopez
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