Vacuum packaged low-power resonant MEMS strain gauge
Vacuum packaged low-power resonant MEMS strain gauge
This paper describes a technical approach toward the realization of a low-power temperature-compensated micromachined resonant strain sensor. The sensor design is based on two identical and orthogonally-oriented resonators where the differential frequency is utilized to provide an output proportional to the applied strain with temperature compensation achieved to first order. Interface circuits comprising of two front-end oscillators, a mixer, and low-pass filter are designed and fabricated in a standard 0.35 µm CMOS process. The characterized devices demonstrate a scale factor of 2.8 Hz/ µε over a strain range of 1000 µε with excellent linearity over the measurement range. The compensated frequency drift due to temperature is reduced to 4% of the uncompensated value through this scheme. The total continuous power consumption of the strain sensor is 3 µW from a 1.2 V supply. This low power implementation is essential to enable battery-powered or energy harvesting enabled monitoring applications.
851-858
Do, Cuong D.
6441fb2f-030e-4ede-8135-07a3ee471894
Erbes, Andreja
587e97f9-78e6-41bf-aa92-dca0ecb9de99
Yan, Jize
786dc090-843b-435d-adbe-1d35e8fc5828
Soga, Kenichi
e43028e3-af4d-4ea4-a747-6cc6dacc849b
Seshia, Ashwin A.
6fe2b5b5-e451-41e2-a23a-601c9faf7d8a
October 2016
Do, Cuong D.
6441fb2f-030e-4ede-8135-07a3ee471894
Erbes, Andreja
587e97f9-78e6-41bf-aa92-dca0ecb9de99
Yan, Jize
786dc090-843b-435d-adbe-1d35e8fc5828
Soga, Kenichi
e43028e3-af4d-4ea4-a747-6cc6dacc849b
Seshia, Ashwin A.
6fe2b5b5-e451-41e2-a23a-601c9faf7d8a
Do, Cuong D., Erbes, Andreja, Yan, Jize, Soga, Kenichi and Seshia, Ashwin A.
(2016)
Vacuum packaged low-power resonant MEMS strain gauge.
Journal of Microelectromechanical Systems, 25 (5), .
(doi:10.1109/JMEMS.2016.2587867).
Abstract
This paper describes a technical approach toward the realization of a low-power temperature-compensated micromachined resonant strain sensor. The sensor design is based on two identical and orthogonally-oriented resonators where the differential frequency is utilized to provide an output proportional to the applied strain with temperature compensation achieved to first order. Interface circuits comprising of two front-end oscillators, a mixer, and low-pass filter are designed and fabricated in a standard 0.35 µm CMOS process. The characterized devices demonstrate a scale factor of 2.8 Hz/ µε over a strain range of 1000 µε with excellent linearity over the measurement range. The compensated frequency drift due to temperature is reduced to 4% of the uncompensated value through this scheme. The total continuous power consumption of the strain sensor is 3 µW from a 1.2 V supply. This low power implementation is essential to enable battery-powered or energy harvesting enabled monitoring applications.
Text
[2016] Do_et_al-2016-Journal_of_Microelectromechanical_Systems-AM.pdf
- Accepted Manuscript
More information
Accepted/In Press date: 25 June 2016
e-pub ahead of print date: 20 July 2016
Published date: October 2016
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 400934
URI: http://eprints.soton.ac.uk/id/eprint/400934
ISSN: 1057-7157
PURE UUID: 37184d2d-2b1b-455a-8343-b8b3de6e804b
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Date deposited: 30 Sep 2016 09:04
Last modified: 15 Mar 2024 03:53
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Contributors
Author:
Cuong D. Do
Author:
Andreja Erbes
Author:
Kenichi Soga
Author:
Ashwin A. Seshia
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