Germanium sulphide and antimony germanium sulphide glass thin films fabricated by chemical vapour deposition
Huang, C.C., Knight, K. and Hewak, D.W. (2006) Germanium sulphide and antimony germanium sulphide glass thin films fabricated by chemical vapour deposition. In, 1st International Congress on Ceramics, Toronto, Canada, 25 - 29 Jun 2006.
Full text not available from this repository.
Germanium sulphide glass thin films have been successfully fabricated directly by the chemical vapour deposition (CVD) process. The precursor, germanium tetrachloride, was used to react with hydrogen sulphide to form germanium sulphide glass thin films on some selected substrates at the temperatures ranging from 450°C to 600°C. By introducing another antimony pentachloride precursor to the above CVD system, a ternary antimony germanium sulphide (Sb-Ge-S) glass thin films can be deposited on some selected substrates at temperatures in the range of 1200°C-400°C and the composition of these Sb-Ge-S glass thin films can be tuned by the selection of different deposition temperatures. These germanium sulphide and antimony germanium sulphide glass thin films have been characterized by micro-Raman, scanning electron microscopy, e-tlergy dispersive X-ray analysis and X-ray diffraction techniques. The CVD technique has been shown a very promising process to fabricate high quality chalcogenide thin films for optical waveguide and device applications.
|Item Type:||Conference or Workshop Item (Paper)|
|Subjects:||Q Science > QC Physics
T Technology > TP Chemical technology
|Divisions:||University Structure - Pre August 2011 > Optoelectronics Research Centre
|Date Deposited:||15 Aug 2007|
|Last Modified:||17 Oct 2016 22:07|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
Actions (login required)