Cohesive zone model for direct silicon wafer bonding
Kubair, D.V. and Spearing, S.M. (2007) Cohesive zone model for direct silicon wafer bonding. Journal of Physics D: Applied Physics, 40, (10), 3070-3076. (doi:10.1088/0022-3727/40/10/010).
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Description/Abstract
Direct silicon wafer bonding and decohesion are simulated using a spectral scheme in conjunction with a rate-dependent cohesive model. The cohesive model is derived assuming the presence of a thin continuum liquid layer at the interface. Cohesive tractions due to the presence of a liquid meniscus always tend to reduce the separation distance between the wafers, thereby opposing debonding, while assisting the bonding process. In the absence of the rate-dependence effects the energy needed to bond a pair of wafers is equal to that needed to separate them. When rate-dependence is considered in the cohesive law, the experimentally observed asymmetry in the energetics can be explained. The derived cohesive model has the potential to form a bridge between experiments and a multiscale-modelling approach to understand the mechanics of wafer bonding.
| Item Type: | Article |
|---|---|
| ISSNs: | 0022-3727 (print) |
| Related URLs: | |
| Subjects: | T Technology > TS Manufactures T Technology > TJ Mechanical engineering and machinery Q Science > QC Physics |
| Divisions: | University Structure - Pre August 2011 > School of Engineering Sciences > Engineering Materials & Surface Engineering |
| Item ID: | 48539 |
| Date Deposited: | 27 Sep 2007 |
| Last Modified: | 01 Jun 2011 00:16 |
| Contributors: | Kubair, D.V. (Author) Spearing, S.M. (Author) |
| Date: | 2007 |
| Status: | Published |
| Contact Email Address: | spearing@soton.ac.uk |
| URI: | http://eprints.soton.ac.uk/id/eprint/48539 |
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