Cohesive zone model for direct silicon wafer bonding


Kubair, D.V. and Spearing, S.M. (2007) Cohesive zone model for direct silicon wafer bonding. Journal of Physics D: Applied Physics, 40, (10), 3070-3076. (doi:10.1088/0022-3727/40/10/010).

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Description/Abstract

Direct silicon wafer bonding and decohesion are simulated using a spectral scheme in conjunction with a rate-dependent cohesive model. The cohesive model is derived assuming the presence of a thin continuum liquid layer at the interface. Cohesive tractions due to the presence of a liquid meniscus always tend to reduce the separation distance between the wafers, thereby opposing debonding, while assisting the bonding process. In the absence of the rate-dependence effects the energy needed to bond a pair of wafers is equal to that needed to separate them. When rate-dependence is considered in the cohesive law, the experimentally observed asymmetry in the energetics can be explained. The derived cohesive model has the potential to form a bridge between experiments and a multiscale-modelling approach to understand the mechanics of wafer bonding.

Item Type: Article
ISSNs: 0022-3727 (print)
Related URLs:
Subjects: T Technology > TS Manufactures
T Technology > TJ Mechanical engineering and machinery
Q Science > QC Physics
Divisions: University Structure - Pre August 2011 > School of Engineering Sciences > Engineering Materials & Surface Engineering
ePrint ID: 48539
Date Deposited: 27 Sep 2007
Last Modified: 27 Mar 2014 18:32
Contact Email Address: spearing@soton.ac.uk
URI: http://eprints.soton.ac.uk/id/eprint/48539

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