Artificial dielectric devices for variable polarization compensation at millimeter and submillimeter wavelengths
Drysdale, T.D., Blaikie, R.J., Chong, H.M.H. and Cumming, D.R.S. (2003) Artificial dielectric devices for variable polarization compensation at millimeter and submillimeter wavelengths. IEEE Transactions on Antennas and Propagations, 51, (11), 3072-3079. (doi:10.1109/TAP.2003.818787).
- Version of Record
Variable polarization compensation has been demonstrated at 100 GHz. The device consists of two interlocking V-groove artificial dielectric gratings that produce a birefringence that varies with the separation distance. A maximum retardance of 74/spl deg/ has been obtained experimentally in a silicon device, in good agreement with rigorous coupled-wave computer simulations. Further simulations predict that adding quarter wave dielectric antireflection (AR) coatings to the outer surfaces of the device can reduce the insertion loss to below 4 dB. The use of rectangular grooved gratings provides increased retardance and reduced loss. It is predicted that a coupled device with rectangular grooved gratings will be capable of maximum retardance in excess of 180/spl deg/, with low insertion loss (<0.6 dB). The sensitivity of the wave retardation as a function of mechanical separation has a peak value of 485/spl deg//mm. The design and micromachining fabrication techniques scale for operation at submillimeter wavelengths.
|Digital Object Identifier (DOI):||doi:10.1109/TAP.2003.818787|
|Keywords:||100 GHz, Si, V-groove gratings, anisotropic media, artificial dielectric gratings, birefringence, insertion loss, micromachining fabrication techniques, millimeter wave devices, quarter wave dielectric antireflection coatings, rectangular grooved gratings, retardance silicon device, submillimeter wave devices, variable polarization compensation, wave retardation|
|Subjects:||Q Science > QA Mathematics > QA75 Electronic computers. Computer science
Q Science > QC Physics
|Divisions:||University Structure - Pre August 2011 > School of Electronics and Computer Science > Nano-Scale Integration Group
University Structure - Pre August 2011 > School of Electronics and Computer Science
|Date Deposited:||08 Oct 2007|
|Last Modified:||06 Aug 2015 02:39|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
Actions (login required)