Femtosecond laser-induced forward transfer of thin films using a Triazene polymer sacrificial layer and an active carrier


Kaur, K., Banks, D.P., Gazia, R., Grivas, C., Fardel, R., Nagel, M., Lippert, T. and Eason, R.W. (2008) Femtosecond laser-induced forward transfer of thin films using a Triazene polymer sacrificial layer and an active carrier. At European Materials Research Society EMRS 2008, Strasbourg, France, 26 - 30 May 2008.

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Description/Abstract

Laser Induced Forward Transfer (LIFT) is a novel direct write technique for material transfer from thin film precursors. In conventional LIFT the material to be transferred is required to act as its own propellant. This requirement is not compatible with the objective of intact material transfer. Recently, UV-absorbing triazene polymers have been reported to be used as sacrificial layers in LIFT experiments. We report the use of these polymers as sacrificial layers at infrared wavelength (800nm) for transferring gadolinium gallium oxide amorphous thin films. A 150 nm thick film was deposited on a 100 nm thick polymer layer by Pulsed Laser Deposition (PLD), to be used as the donor film. Intact thin films were successfully deposited on a silicon receiver kept at a distance of 400nm. The concept of using the carrier in an active role is a completely new and exciting approach for LIFT.

Item Type: Conference or Workshop Item (Poster)
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Subjects: Q Science
T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology
Q Science > QC Physics
Divisions: University Structure - Pre August 2011 > Optoelectronics Research Centre
ePrint ID: 54029
Date Deposited: 22 Aug 2008
Last Modified: 27 Mar 2014 18:37
URI: http://eprints.soton.ac.uk/id/eprint/54029

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