A comparative study of gadolinium gallium garnet growth by femtosecond and nanosecond pulsed laser deposition
Darby, M.S.B., May-Smith, T.C., Eason, R.W., Donnelly, T., Lunney, J.G. and Rogers, K.D. (2007) A comparative study of gadolinium gallium garnet growth by femtosecond and nanosecond pulsed laser deposition. Applied Surface Science, 254, (11), 3364-3369. (doi:10.1016/j.apsusc.2007.11.016).
Full text not available from this repository.
The growth of epitaxial Nd:Gd (YAG) by femtosecond pulsed laser deposition is reported. We have used a Ti:sapphire laser at a wavelength of 800 nm and pulse length of 130 fs, operating at a repetition rate of 1 kHz. The film properties have been studied systematically as a function of the deposition parameters of laser fluence, spot-size, oxygen pressure, target-substrate distance and temperature. Scanning electron microscopy, atomic force microscopy and X-ray diffractometry were used to characterise the surface structure and crystallinity of the films. X-ray diffraction analysis shows that epitaxial growth has occurred. A comparison between the ion velocities produced by nanosecond and femtosecond laser ablation of the GGG target material has been investigated by the Langmuir probe technique. The results indicate a large difference in the plasma characteristics between femtosecond and nanosecond ablation, with ion velocities up to eight times faster observed in the femtosecond case.
|Digital Object Identifier (DOI):||doi:10.1016/j.apsusc.2007.11.016|
|Keywords:||pulsed laser deposition, plasmas, femotsecond, langmuir probe, thin films, garnet crystal, epitaxy|
|Subjects:||Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
|Divisions :||University Structure - Pre August 2011 > Optoelectronics Research Centre
|Accepted Date and Publication Date:||
|Date Deposited:||11 Aug 2008|
|Last Modified:||31 Mar 2016 12:33|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
Actions (login required)