Polarization-dependent Rabi oscillations in single InGaAs quantum dots

Besombes, L., Baumberg, J.J. and Motohisa, J. (2004) Polarization-dependent Rabi oscillations in single InGaAs quantum dots. Semiconductor Science and Technology, 19, (4), S148-S151. (doi:10.1088/0268-1242/19/4/052).


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Measurements of optical Rabi oscillations in the excited states of individual InGaAs are presented. Under pulsed resonant excitation we observe Rabi oscillations with increasing pulse area, which are damped after the first maximum and minimum. We show that the observed damping comes from an additional non-resonant generation of carriers in the quantum dot. The observation of Rabi oscillations provides an efficient way of directly measuring the excitonic transitions' dipole moments. A polarization anisotropy of the dipole moment is resolved in some of the quantum dots.

Item Type: Article
Digital Object Identifier (DOI): doi:10.1088/0268-1242/19/4/052
ISSNs: 0268-1242 (print)
Related URLs:
Subjects: T Technology > TP Chemical technology
Q Science > QC Physics
Divisions : University Structure - Pre August 2011 > School of Physics and Astronomy
ePrint ID: 57084
Accepted Date and Publication Date:
23 July 2003Submitted
Date Deposited: 13 Aug 2008
Last Modified: 31 Mar 2016 12:37
URI: http://eprints.soton.ac.uk/id/eprint/57084

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