Metal catalyst-free low-temperature carbon nanotube growth on SiGe islands

Uchino, T., Bourdakos, K.N., De Groot,, C.H., Ashburn, P., Kiziroglou, M.E., Dilliway, G.D. and Smith, D.C. (2005) Metal catalyst-free low-temperature carbon nanotube growth on SiGe islands. Applied Physics Letters, 86, (23), 233110-[3pp]. (doi:10.1063/1.1946191).


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A metal-catalyst-free growth method of carbon nanotubes (CNTs) has been developed using chemical vapor deposition of CNTs on carbon-implanted SiGe islands on Si substrates. From scanning electron microscopy and Raman measurements, the fabricated CNTs are identified as single-walled CNTs with a diameter ranging from 1.2 to 1.6 nm. Essential parts of the substrate preparation after CVD SiGe growth and carbon implant are a chemical oxidization by hydrogen peroxide solution and a heat treatment at 1000 °C prior to CNT growth. We believe that these processes enhance surface decomposition and assist the formation of carbon clusters, which play a role in seeding CNT growth. The growth technique is a practical method of growing metal-free CNTs for a variety of applications, while at the same time opening up the prospect of merging CNT devices into silicon very-large-scale-integration technology.

Item Type: Article
Digital Object Identifier (DOI): doi:10.1063/1.1946191
ISSNs: 0003-6951 (print)
Related URLs:
Subjects: T Technology > TP Chemical technology
Q Science > QC Physics
Divisions : University Structure - Pre August 2011 > School of Electronics and Computer Science
University Structure - Pre August 2011 > School of Physics and Astronomy
ePrint ID: 57622
Accepted Date and Publication Date:
Date Deposited: 13 Aug 2008
Last Modified: 31 Mar 2016 12:38

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