All optical switching at Gallium/semiconductor interfaces

Woodford, M., Stevens, G.C. and Zheludev, N.I. (2004) All optical switching at Gallium/semiconductor interfaces. In, Photon '04 / QEP-16, Glasgow, UK, 06 - 09 Sep 2004.


Full text not available from this repository.


We have observed for the first time that the interface between elemental gallium and semiconductors such as ZnSe or Si manifests optically induced reflectivity switching. This functionality is possible through controlling the coexistence of structural phases of Gallium with different optical properties in the nanoscale thick layer at the metal-semiconductor interface. A particular interest in Ga-semiconductor interfaces is driven by their technological importance for integrated photonic devices and the possibility to achieve high-contrast switching at certain wavelength ranges where the dielectric properties of the semiconductor match that of the interfacing gallium layer. Our results indicate that Ga films deposited directly on semiconductor elements could be useful in all-optical switching devices, optical limiters and as q-switching elements in low power fiber and semiconductors lasers.

Item Type: Conference or Workshop Item (Paper)
Related URLs:
Subjects: Q Science
T Technology > TK Electrical engineering. Electronics Nuclear engineering
T Technology
Q Science > QC Physics
Divisions : University Structure - Pre August 2011 > Optoelectronics Research Centre
ePrint ID: 57762
Accepted Date and Publication Date:
September 2004Published
Date Deposited: 11 Aug 2008
Last Modified: 31 Mar 2016 12:39

Actions (login required)

View Item View Item