Wafer bonding with nanoprecision alignment for micro/nano systems

Jiang, Liudi, Pandraud, G., French, P.J., Spearing, S.M. and Kraft, M. (2007) Wafer bonding with nanoprecision alignment for micro/nano systems. In, Transducers & Eurosensors '07: 14th International Conference on Solid-State Sensors, Actuators and Microsystems, Lyon, France, 10 - 14 Jun 2007. USA, Institute of Electrical and Electronics Engineers, 2103-2106. (doi:10.1109/SENSOR.2007.4300580).


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Exploiting mechanical principles of kinematic and elastic averaging, a novel passive approach has been developed to achieve nanoprecision bonding alignment. Alignment features comprising cantilever supported pyramids and V-pits have been designed and fabricated at silicon chip level. The engagement between the pyramids and pits and the compliance of the cantilevers result in the passive alignment. Infrared (IR) and scanning electron microscopy (SEM) inspections repeatedly confirmed the alignment accuracy of better than 200 nm at the bonding interface with good bonding quality. The applicability of the developed alignment technique and future works towards wafer level applications for advanced micro/nano systems are discussed.

Item Type: Conference or Workshop Item (Paper)
Digital Object Identifier (DOI): doi:10.1109/SENSOR.2007.4300580
ISBNs: 1424408423 (hardback)
Related URLs:
Subjects: T Technology > TS Manufactures
Divisions : University Structure - Pre August 2011 > School of Engineering Sciences > Engineering Materials & Surface Engineering
Faculty of Engineering and the Environment > Engineering Sciences
ePrint ID: 63547
Accepted Date and Publication Date:
10 June 2007Published
Date Deposited: 20 Oct 2008
Last Modified: 31 Mar 2016 12:48
URI: http://eprints.soton.ac.uk/id/eprint/63547

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