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Mechanical properties of a 3C-SiC film between room temperature and 600 ?C

Mechanical properties of a 3C-SiC film between room temperature and 600 ?C
Mechanical properties of a 3C-SiC film between room temperature and 600 ?C
Silicon carbide (SiC) is widely recognized as the leading candidate to replace silicon in micro-electro-mechanical systems devices operating in harsh environments. In this work, cantilevers and bridges in SiC are designed, fabricated and evaluated between room temperature (RT) and 600 °C. The active material is a cubic poly-SiC film deposited on a poly-Si layer which is separated from the Si substrate by a thermal oxide. From surface profiling and optical observations, it is deduced that an average residual strain of +5 × 10?4 is present in the 2.7 µm thick film, with a gradient of 2.5 × 10?4 µm?1. The structures are excited either mechanically or electrostatically. Their resonance frequency is measured by laser Doppler velocimetry and used to derive the Young's modulus and residual stress in the heteroepitaxial layer (330± 45 GPa and 200± 20 MPa, respectively). The temperature coefficient of Young's modulus is found to be ?53± 2 ppm K?1 in the range RT to ~ 300 °C, while an analytical expression is given for the temperature dependence of the Young's modulus between RT and 500 °C. The residual tensile stress is found to depend on temperature in a complex manner.
0022-3727
3335-3342
Pozzi, Michele
f3955cc3-9717-47cd-8c08-9a5901e7f5a9
Hassan, Musaab
2fd49e0a-2c06-49d6-ac94-d2e5d52f8433
Harris, Alun J.
877bc9ef-13b3-4d64-b05b-b9b587781a99
Burgess, Jim S.
326165bb-358c-4e37-bf08-ca968ab794c5
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Lee, Kin K.
d461100b-44f7-4686-80b9-6992c69283df
Cheung, Rebecca
331f20bf-d60d-42ba-90ad-82a6cb16af30
Phelps, Gordon J.
5d5d8bf0-18a0-407d-ac50-b0602ebd536c
Wright, Nick G.
9f2fa5fe-f986-4672-a03b-ffb279e1760d
Zorman, Christian A.
bb1bdc8c-9671-4b3b-9c98-a572e5acb415
Mehregany, Mehran
4c237cd9-e2a0-4459-9517-a927d6cf860d
Pozzi, Michele
f3955cc3-9717-47cd-8c08-9a5901e7f5a9
Hassan, Musaab
2fd49e0a-2c06-49d6-ac94-d2e5d52f8433
Harris, Alun J.
877bc9ef-13b3-4d64-b05b-b9b587781a99
Burgess, Jim S.
326165bb-358c-4e37-bf08-ca968ab794c5
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Lee, Kin K.
d461100b-44f7-4686-80b9-6992c69283df
Cheung, Rebecca
331f20bf-d60d-42ba-90ad-82a6cb16af30
Phelps, Gordon J.
5d5d8bf0-18a0-407d-ac50-b0602ebd536c
Wright, Nick G.
9f2fa5fe-f986-4672-a03b-ffb279e1760d
Zorman, Christian A.
bb1bdc8c-9671-4b3b-9c98-a572e5acb415
Mehregany, Mehran
4c237cd9-e2a0-4459-9517-a927d6cf860d

Pozzi, Michele, Hassan, Musaab, Harris, Alun J., Burgess, Jim S., Jiang, Liudi, Lee, Kin K., Cheung, Rebecca, Phelps, Gordon J., Wright, Nick G., Zorman, Christian A. and Mehregany, Mehran (2007) Mechanical properties of a 3C-SiC film between room temperature and 600 ?C. Journal of Physics D: Applied Physics, 40 (11), 3335-3342. (doi:10.1088/0022-3727/40/11/012).

Record type: Article

Abstract

Silicon carbide (SiC) is widely recognized as the leading candidate to replace silicon in micro-electro-mechanical systems devices operating in harsh environments. In this work, cantilevers and bridges in SiC are designed, fabricated and evaluated between room temperature (RT) and 600 °C. The active material is a cubic poly-SiC film deposited on a poly-Si layer which is separated from the Si substrate by a thermal oxide. From surface profiling and optical observations, it is deduced that an average residual strain of +5 × 10?4 is present in the 2.7 µm thick film, with a gradient of 2.5 × 10?4 µm?1. The structures are excited either mechanically or electrostatically. Their resonance frequency is measured by laser Doppler velocimetry and used to derive the Young's modulus and residual stress in the heteroepitaxial layer (330± 45 GPa and 200± 20 MPa, respectively). The temperature coefficient of Young's modulus is found to be ?53± 2 ppm K?1 in the range RT to ~ 300 °C, while an analytical expression is given for the temperature dependence of the Young's modulus between RT and 500 °C. The residual tensile stress is found to depend on temperature in a complex manner.

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More information

Published date: 18 May 2007
Organisations: Engineering Mats & Surface Engineerg Gp

Identifiers

Local EPrints ID: 66432
URI: http://eprints.soton.ac.uk/id/eprint/66432
ISSN: 0022-3727
PURE UUID: fc4070ee-2bc6-4607-8873-e8cba8ce6a7a
ORCID for Liudi Jiang: ORCID iD orcid.org/0000-0002-3400-825X

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Date deposited: 06 Oct 2009
Last modified: 14 Mar 2024 02:50

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Contributors

Author: Michele Pozzi
Author: Musaab Hassan
Author: Alun J. Harris
Author: Jim S. Burgess
Author: Liudi Jiang ORCID iD
Author: Kin K. Lee
Author: Rebecca Cheung
Author: Gordon J. Phelps
Author: Nick G. Wright
Author: Christian A. Zorman
Author: Mehran Mehregany

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