High density p-type Bi0.5Sb1.5Te3 nanowires by electrochemical templating through ion-track lithography

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Description/Abstract

High density p-type Bi0.5Sb1.5Te3 nanowire arrays are produced by a combination of
electrodeposition and ion-track lithography technology. Initially, the electrodeposition of p-type
Bi0.5Sb1.5Te3 films is investigated to find out the optimal conditions for the deposition of
nanowires. Polyimide-based Kapton foils are chosen as a polymer for ion track irradiation and
nanotemplating Bi0.5Sb1.5Te3 nanowires. The obtained nanowires have average diameters of
80 nm and lengths of 20 mm, which are equivalent to the pore size and thickness of Kapton foils.
The nanowires exhibit a preferential orientation along the {110} plane with a composition of
11.26 at.% Bi, 26.23 at.% Sb, and 62.51 at.% Te. Temperature dependence studies of the
electrical resistance show the semiconducting nature of the nanowires with a negative temperature
coefficient of resistance and band gap energy of 0.089 0.006 eV.