Resistivity percolation of co-sputtered amorphous Si/Ti films
Resistivity percolation of co-sputtered amorphous Si/Ti films
Amorphous silicon/titanium (a-Si/Ti) composite was deposited by co-sputtering techniques at room temperature with a view to explore its potential applications for monolithic integration of micro-electromechanical systems (MEMS) and integrated circuits. The electrical resistivity of the films was successfully controlled over a range of magnitudes and the electrical transport mechanism was studied, based on percolation conduction theory of a three dimensional random network. The stability of the nanostructures and thus the percolation threshold was also observed at annealing temperatures below 300 °C, while the percolation threshold decreased with annealing temperature above 300 °C. Surface morphology and dry etching feasibility of the composite are also discussed for the potential applications of using it as the structural device layer for MEMS.
amorphous Si/Ti, nanocomposites, electrical properties, percolation
215-217
Lewis, G.
61365ff8-ab4b-4204-98bb-69e8bba10fdc
Moktadir, Zakaria
34472668-ffda-4287-8fea-2c4f3bf1e2fa
Kraft, Michael
54927621-738f-4d40-af56-a027f686b59f
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
11 October 2008
Lewis, G.
61365ff8-ab4b-4204-98bb-69e8bba10fdc
Moktadir, Zakaria
34472668-ffda-4287-8fea-2c4f3bf1e2fa
Kraft, Michael
54927621-738f-4d40-af56-a027f686b59f
Jiang, Liudi
374f2414-51f0-418f-a316-e7db0d6dc4d1
Lewis, G., Moktadir, Zakaria, Kraft, Michael and Jiang, Liudi
(2008)
Resistivity percolation of co-sputtered amorphous Si/Ti films.
Materials Letters, 63 (2), .
(doi:10.1016/j.matlet.2008.09.061).
Abstract
Amorphous silicon/titanium (a-Si/Ti) composite was deposited by co-sputtering techniques at room temperature with a view to explore its potential applications for monolithic integration of micro-electromechanical systems (MEMS) and integrated circuits. The electrical resistivity of the films was successfully controlled over a range of magnitudes and the electrical transport mechanism was studied, based on percolation conduction theory of a three dimensional random network. The stability of the nanostructures and thus the percolation threshold was also observed at annealing temperatures below 300 °C, while the percolation threshold decreased with annealing temperature above 300 °C. Surface morphology and dry etching feasibility of the composite are also discussed for the potential applications of using it as the structural device layer for MEMS.
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Published date: 11 October 2008
Keywords:
amorphous Si/Ti, nanocomposites, electrical properties, percolation
Organisations:
Nanoelectronics and Nanotechnology
Identifiers
Local EPrints ID: 68839
URI: http://eprints.soton.ac.uk/id/eprint/68839
ISSN: 0167-577X
PURE UUID: 3a93a46d-3748-4ddd-82c7-1753baa74535
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Date deposited: 06 Oct 2009
Last modified: 14 Mar 2024 02:50
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Contributors
Author:
G. Lewis
Author:
Zakaria Moktadir
Author:
Michael Kraft
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