Resistivity percolation of co-sputtered amorphous Si/Ti films
Lewis, G., Moktadir, Z., Kraft, M and Jiang, Liudi (2009) Resistivity percolation of co-sputtered amorphous Si/Ti films. Materials Letters, 63, (2), 215-217. (doi:10.1016/j.matlet.2008.09.061).
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Description/Abstract
Amorphous silicon/titanium (a-Si/Ti) composite was deposited by co-sputtering techniques at room temperature
with a view to explore its potential applications for monolithic integration of micro-electromechanical
systems (MEMS) and integrated circuits. The electrical resistivity of the films was successfully
controlled over a range of magnitudes and the electrical transport mechanism was studied, based on
percolation conduction theory of a three dimensional random network. The stability of the nanostructures
and thus the percolation threshold was also observed at annealing temperatures below 300 °C, while the
percolation threshold decreased with annealing temperature above 300 °C. Surface morphology and dry
etching feasibility of the composite are also discussed for the potential applications of using it as the
structural device layer for MEMS.
| Item Type: | Article |
|---|---|
| ISSNs: | 0167-577X (print) |
| Related URLs: | |
| Keywords: | amorphous Si/Ti, nanocomposites, electrical properties, percolation |
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
| Divisions: | University Structure - Pre August 2011 > School of Engineering Sciences > Engineering Materials & Surface Engineering |
| Item ID: | 68839 |
| Date Deposited: | 06 Oct 2009 |
| Last Modified: | 22 Jul 2012 23:50 |
| Contributors: | Lewis, G. (Author) Moktadir, Z. (Author) Kraft, M (Author) Jiang, Liudi (Author) |
| Date: | 31 January 2009 |
| Status: | Published |
| Contact Email Address: | ldjiang@soton.ac.uk |
| URI: | http://eprints.soton.ac.uk/id/eprint/68839 |
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