Study of Ti:sapphire layers created by PLD

Jelínek, M., Eason, R.W., Lančok, J., Anderson, A.A., Grivas, C., Fotakis, C., Jastrabík, L. and Flory, F.B. (1996) Study of Ti:sapphire layers created by PLD. In, Deng, Shu-Sen and Wang, S.C. (eds.) Laser Processing of Materials and Industrial Applications. Bellingham, US, The International Society for Optical Engineering, 51-59. (Proceedings of SPIE, 2888). (doi:10.1117/12.253103).


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Thin films of Ti:sapphire were fabricated by KrF laser ablation on (0001) and (1102) sapphire, on (001) quartz and on fused silica substrates from crystalline Ti:saphire targets (0,12 wt% and 0,453 wt%)). Substrates were heated during the deposition at low temperatures (500°C - 600°C) or at high temperatures (1000°C - 1390°C). Films luminescence, crystallinity, fluorescence lifetime, dopants content, waveguiding and surface morphology of created Ti:sapphire films were studied. Results are presented and discussed.

Item Type: Book Section
Digital Object Identifier (DOI): doi:10.1117/12.253103
Related URLs:
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions : University Structure - Pre August 2011 > Optoelectronics Research Centre
ePrint ID: 76857
Accepted Date and Publication Date:
6 November 1996Delivered
Date Deposited: 11 Mar 2010
Last Modified: 31 Mar 2016 13:10

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