Thermal diffusion of Ti3+ into sapphire for active integrated optical devices
Hickey, L.M.B., Román, J.E., Wilkinson, J.S., Moya, E.G. and Moya, F. (1996) Thermal diffusion of Ti3+ into sapphire for active integrated optical devices. In, International Quantum Electronics Conference International Conference on Quantum Electronics (IQEC '96), Sydney, AU, 14 - 19 Jul 1996.
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Description/Abstract
Thermal diffusion of Ti3+ into sapphire is demonstrated, with depths in excess of 50µm observed after 8 hours annealing at 1950°C. Appropriate fabrication conditions for the future development of active integrated optical devices are identified
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Related URLs: | |
| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | University Structure - Pre August 2011 > Optoelectronics Research Centre |
| Item ID: | 76884 |
| Date Deposited: | 11 Mar 2010 |
| Last Modified: | 26 Aug 2012 12:11 |
| Contributors: | Hickey, L.M.B. (Author) Román, J.E. (Author) Wilkinson, J.S. (Author) Moya, E.G. (Author) Moya, F. (Author) |
| Date: | 1996 |
| Status: | Unpublished |
| URI: | http://eprints.soton.ac.uk/id/eprint/76884 |
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