Thermal diffusion of Ti3+ into sapphire for active integrated optical devices


Hickey, L.M.B., Román, J.E., Wilkinson, J.S., Moya, E.G. and Moya, F. (1996) Thermal diffusion of Ti3+ into sapphire for active integrated optical devices. In, International Quantum Electronics Conference International Conference on Quantum Electronics (IQEC '96), Sydney, AU, 14 - 19 Jul 1996.

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Description/Abstract

Thermal diffusion of Ti3+ into sapphire is demonstrated, with depths in excess of 50µm observed after 8 hours annealing at 1950°C. Appropriate fabrication conditions for the future development of active integrated optical devices are identified

Item Type: Conference or Workshop Item (Paper)
Related URLs:
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: University Structure - Pre August 2011 > Optoelectronics Research Centre
ePrint ID: 76884
Date Deposited: 11 Mar 2010
Last Modified: 27 Mar 2014 18:56
URI: http://eprints.soton.ac.uk/id/eprint/76884

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