Laser ablation deposition of Ga2S3-La2S3 glass films


Asal, R., Rivers, P.E. and Rutt, H.N. (1995) Laser ablation deposition of Ga2S3-La2S3 glass films. In, Materials Research Society Symposium, Boston Spa, GB,

Download

[img] PDF
Download (927Kb)

Description/Abstract

Gallium - lanthanum sulphide glasses (GLS) show wide range transparency and low non radiative relaxation rates for dopant ions such as Ho3+, Er3+ etc. They also show permanent photomodification of the refractive index under visible illumination. We report laser ablation deposition of these glasses and preliminary results on film stoichiometry and deposition rate as a function of excimer laser fluence. The sulphur to metal and Ga/La ratios are found to have marked fluence dependencies. The films show considerably more Urbach tail absorption than bulk material. A novel method has been developed for mapping the permanent photomodifled index.

Item Type: Conference or Workshop Item (Paper)
Related URLs:
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
Divisions: University Structure - Pre August 2011 > Optoelectronics Research Centre
ePrint ID: 76952
Date Deposited: 11 Mar 2010
Last Modified: 27 Mar 2014 18:56
URI: http://eprints.soton.ac.uk/id/eprint/76952

Actions (login required)

View Item View Item

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics