Laser ablation deposition of Ga2S3-La2S3 glass films


Asal, R., Rivers, P.E. and Rutt, H.N. (1995) Laser ablation deposition of Ga2S3-La2S3 glass films. In, Materials Research Society Symposium, Boston Spa, GB,

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Description/Abstract

Gallium - lanthanum sulphide glasses (GLS) show wide range transparency and low non radiative relaxation rates for dopant ions such as Ho3+, Er3+ etc. They also show permanent photomodification of the refractive index under visible illumination. We report laser ablation deposition of these glasses and preliminary results on film stoichiometry and deposition rate as a function of excimer laser fluence. The sulphur to metal and Ga/La ratios are found to have marked fluence dependencies. The films show considerably more Urbach tail absorption than bulk material. A novel method has been developed for mapping the permanent photomodifled index.

Item Type: Conference or Workshop Item (Paper)
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Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
Divisions: University Structure - Pre August 2011 > Optoelectronics Research Centre
ePrint ID: 76952
Date Deposited: 11 Mar 2010
Last Modified: 27 Mar 2014 18:56
URI: http://eprints.soton.ac.uk/id/eprint/76952

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