Laser ablation deposition of Ga2S3-La2S3 glass films
Asal, R., Rivers, P.E. and Rutt, H.N. (1995) Laser ablation deposition of Ga2S3-La2S3 glass films. In, Materials Research Society Symposium, Boston Spa, GB,
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Description/Abstract
Gallium - lanthanum sulphide glasses (GLS) show wide range transparency and low non radiative relaxation rates for dopant ions such as Ho3+, Er3+ etc. They also show permanent photomodification of the refractive index under visible illumination. We report laser ablation deposition of these glasses and preliminary results on film stoichiometry and deposition rate as a function of excimer laser fluence. The sulphur to metal and Ga/La ratios are found to have marked fluence dependencies. The films show considerably more Urbach tail absorption than bulk material. A novel method has been developed for mapping the permanent photomodifled index.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Related URLs: | |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
| Divisions: | University Structure - Pre August 2011 > Optoelectronics Research Centre |
| Item ID: | 76952 |
| Date Deposited: | 11 Mar 2010 |
| Last Modified: | 17 May 2013 01:03 |
| Contributors: | Asal, R. (Author) Rivers, P.E. (Author) Rutt, H.N. (Author) |
| Date: | 1995 |
| Status: | Published |
| URI: | http://eprints.soton.ac.uk/id/eprint/76952 |
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