The photoluminescence of erbium-doped silicon monoxide
Roberts, S.W., Parker, G.J. and Hempstead, M. (1995) The photoluminescence of erbium-doped silicon monoxide. 1st International Workshop on Materials for Optoelectronics, Sheffield, GB, 22 - 23 Aug 1995.
Films of silicon monoxide coevaporated with erbium are shown to produce strong room temperature photoluminescence peaked at 1535nm after annealing at 600°C. Decay measurements show a double exponential function with lifetimes of 0.41ms and 2.12ms, suggesting two distinct optically active erbium sites. Photoluminescence excitation spectroscopy between 700nm and 860nm reveals a monotonic increase in photoluminescence intensity towards shorter wavelengths. This result suggests that the transfer of energy from the pump source to the erbium ions is mainly via the recombination of electron-hole pairs (photocarriers) which are created by absorption within the SiO.
|Item Type:||Conference or Workshop Item (Invited Paper)|
|Subjects:||Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
|Divisions:||University Structure - Pre August 2011 > Optoelectronics Research Centre
|Date Deposited:||11 Mar 2010|
|Last Modified:||27 Mar 2014 18:56|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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