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The photoluminescence of erbium-doped silicon monoxide

The photoluminescence of erbium-doped silicon monoxide
The photoluminescence of erbium-doped silicon monoxide
Films of silicon monoxide coevaporated with erbium are shown to produce strong room temperature photoluminescence peaked at 1535nm after annealing at 600°C. Decay measurements show a double exponential function with lifetimes of 0.41ms and 2.12ms, suggesting two distinct optically active erbium sites. Photoluminescence excitation spectroscopy between 700nm and 860nm reveals a monotonic increase in photoluminescence intensity towards shorter wavelengths. This result suggests that the transfer of energy from the pump source to the erbium ions is mainly via the recombination of electron-hole pairs (photocarriers) which are created by absorption within the SiO.
Roberts, S.W.
82c37085-83b9-43b2-a307-93e079ba30b3
Parker, G.J.
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Hempstead, M.
1bc4f2eb-fba7-46b8-b0c6-199f586b9954
Roberts, S.W.
82c37085-83b9-43b2-a307-93e079ba30b3
Parker, G.J.
0be0b760-c634-410d-adf6-076c6636be7e
Hempstead, M.
1bc4f2eb-fba7-46b8-b0c6-199f586b9954

Roberts, S.W., Parker, G.J. and Hempstead, M. (1995) The photoluminescence of erbium-doped silicon monoxide. 1st International Workshop on Materials for Optoelectronics, , Sheffield, United Kingdom. 22 - 23 Aug 1995.

Record type: Conference or Workshop Item (Paper)

Abstract

Films of silicon monoxide coevaporated with erbium are shown to produce strong room temperature photoluminescence peaked at 1535nm after annealing at 600°C. Decay measurements show a double exponential function with lifetimes of 0.41ms and 2.12ms, suggesting two distinct optically active erbium sites. Photoluminescence excitation spectroscopy between 700nm and 860nm reveals a monotonic increase in photoluminescence intensity towards shorter wavelengths. This result suggests that the transfer of energy from the pump source to the erbium ions is mainly via the recombination of electron-hole pairs (photocarriers) which are created by absorption within the SiO.

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Published date: August 1995
Additional Information: Invited
Venue - Dates: 1st International Workshop on Materials for Optoelectronics, , Sheffield, United Kingdom, 1995-08-22 - 1995-08-23

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Local EPrints ID: 76969
URI: http://eprints.soton.ac.uk/id/eprint/76969
PURE UUID: 08e196ba-e35a-4b42-9056-2d0a6756309b

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Date deposited: 11 Mar 2010
Last modified: 13 Mar 2024 23:41

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Contributors

Author: S.W. Roberts
Author: G.J. Parker
Author: M. Hempstead

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