The effect of visible and near infrared illumination on the mid infrared transmission of silicon and germanium


Rutt, Harvey N. (1994) The effect of visible and near infrared illumination on the mid infrared transmission of silicon and germanium. In, SPIE International Symposium on Optics Imaging and Instrumentation, San Diego, US, 24 - 29 Jul 1994. , 100-107. (doi:10.1117/12.187332).

Download

Full text not available from this repository.

Description/Abstract

Germanium and silicon optical transmissive components are widely used in infrared lenses, filter substrates, etc. We demonstrate that severe loss can be induced in some germanium samples by illumination in the visible or near infrared with power densities in the region of watts per square centimeter. The absorption arises from light hole to heavy hole inter valence band transitions. The strength of the absorption induced depends on a number of parameters not normally controlled in optical applications, such as minority carrier lifetime and surface recombination velocity. The effect is very much weaker in silicon.

Item Type: Conference or Workshop Item (Paper)
Digital Object Identifier (DOI): doi:10.1117/12.187332
Additional Information: ISSN: 0277-786X
Related URLs:
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions : University Structure - Pre August 2011 > Optoelectronics Research Centre
ePrint ID: 77086
Accepted Date and Publication Date:
Status
1994Published
Date Deposited: 11 Mar 2010
Last Modified: 13 Nov 2016 20:37
URI: http://eprints.soton.ac.uk/id/eprint/77086

Actions (login required)

View Item View Item