Ion implanted quasi-three-level Yb:YAG waveguide lasers


Shepherd, D.P., Hanna, D.C., Jones, J.K., Large, A.C., Tropper, A.C., Chandler, P.J., Townsend, P.D. and Zhang, L. (1993) Ion implanted quasi-three-level Yb:YAG waveguide lasers. In, Proceedings of Conference on Lasers and Electro-Optics. Conference on Lasers and Electro-Optics (CLEO '93) Washington, US, Optical Society of America, 626.

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Description/Abstract

Yb:YAG has manv advantages compared to the widely used Nd:YAG system. These include closer pump and laser wavelengths, leading to a more efficient transfer of energy from the pump to laser photons and less thermal loading of the gain medium. Excited state absorption, upconversion, and concentration quenching are also reduced because of the fact that there is only one excited 4f manifold. Efficient, room-temperature operation of a bulk Yb:YAG laser at 1.03 µm has recently been reported showing that the broad absorption bands are well suited to diode pumping

Item Type: Book Section
ISBNs: 1557522995
9781557522993
Related URLs:
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: University Structure - Pre August 2011 > Optoelectronics Research Centre
Faculty of Physical Sciences and Engineering > Optoelectronics Research Centre
Faculty of Physical Sciences and Engineering > Physics and Astronomy
ePrint ID: 77311
Date Deposited: 11 Mar 2010
Last Modified: 27 Mar 2014 18:57
URI: http://eprints.soton.ac.uk/id/eprint/77311

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