First laser operation at 1.03µm of an epitaxially grown Yb:YAG waveguide

Pelenc, D., Chambaz, B., Chartier, I., Ferrand, B., Hanna, D.C., Large, A.C., Shepherd, D.P. and Tropper, A.C. (1993) First laser operation at 1.03µm of an epitaxially grown Yb:YAG waveguide. In, 6th European Conference on Integrated Optics and Technical Exhibit , Neuchâtel, CH, 18 - 22 Apr 1993.


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We report the 1.03 µm laser operation of a diode-pumped Yb doped YAG planar waveguide at room temperature. The fabrication of multilayer planar waveguides by Liquid Phase Epitaxy (LPE) and their characterization are also described. Laser results (82 mW threshold, 30% slope efficiency) obtained with a 2.9% output coupler compares favorably with bulk results reported elsewhere.

Item Type: Conference or Workshop Item (Paper)
Related URLs:
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: University Structure - Pre August 2011 > Optoelectronics Research Centre
ePrint ID: 77313
Date :
Date Event
April 1993["eprint_fieldopt_dates_date_type_delivered" not defined]
Date Deposited: 11 Mar 2010
Last Modified: 31 Mar 2016 13:11

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