A low threshold quasi-three-level 946nm Nd:YAG epitaxial waveguide laser

Hanna, D.C., Large, A.C., Shepherd, D.P., Tropper, A.C., Chartier, I., Ferrand, B. and Pelenc, D. (1993) A low threshold quasi-three-level 946nm Nd:YAG epitaxial waveguide laser. In, ASSL 93: Advanced Solid State Lasers , New Orleans, US, Feb 1993.


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We report the 946nm laser operation of an epitaxially grown Nd:YAG planar waveguide. The incident and absorbed power thresholds of 4mW and 1.2mW respectively are lower than those reported for bulk lasers when using a similar experimental set up. We also report the use of Ga doping of the active layer to increase the refractive index difference to allow the production of very small guiding layers.

Item Type: Conference or Workshop Item (Paper)
Related URLs:
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions : University Structure - Pre August 2011 > Optoelectronics Research Centre
ePrint ID: 77316
Accepted Date and Publication Date:
Date Deposited: 11 Mar 2010
Last Modified: 31 Mar 2016 13:11
URI: http://eprints.soton.ac.uk/id/eprint/77316

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