Deol, R.S. and Kobayashi, T.
AlxGa1-xAs synthesis by knock-on effect of atoms from Al films on GaAs by As+ implantation.
Memoirs of Kobe University Japan, Kobe, Japan,
The synthesis of Al(x)Ga(1-x)As by depositing thin films of Al on GaAs substrates and irradiating with arsenic ions has been studied using photoluminescence, transmission electron microscopy and secondary ion mass spectrometry. Following implantation secondary ion mass spectrometry has identified appreciable levels of Al to a depth of about 0.25µm. AlGaAs emission within the photoluminescence spectra was seen for samples implanted with 1 x 10 of As+ at 150 keV through an Al-film of thickness 580 Angstrom and annealed at 950°C for 25sec. Transmission electron microscopy showed these layers to be single-crystal but characterised by dislocation loops of varying sizes
Actions (login required)