AlxGa1-xAs synthesis by knock-on effect of atoms from Al films on GaAs by As+ implantation

Deol, R.S. and Kobayashi, T. (1991) AlxGa1-xAs synthesis by knock-on effect of atoms from Al films on GaAs by As+ implantation. Memoirs of Kobe University Japan, Kobe, Japan,


[img] PDF
Download (321Kb)


The synthesis of Al(x)Ga(1-x)As by depositing thin films of Al on GaAs substrates and irradiating with arsenic ions has been studied using photoluminescence, transmission electron microscopy and secondary ion mass spectrometry. Following implantation secondary ion mass spectrometry has identified appreciable levels of Al to a depth of about 0.25µm. AlGaAs emission within the photoluminescence spectra was seen for samples implanted with 1 x 10 of As+ at 150 keV through an Al-film of thickness 580 Angstrom and annealed at 950°C for 25sec. Transmission electron microscopy showed these layers to be single-crystal but characterised by dislocation loops of varying sizes

Item Type: Conference or Workshop Item (Invited Paper)
Related URLs:
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions : University Structure - Pre August 2011 > Optoelectronics Research Centre
ePrint ID: 77402
Accepted Date and Publication Date:
October 1991Delivered
Date Deposited: 11 Mar 2010
Last Modified: 31 Mar 2016 13:11

Actions (login required)

View Item View Item

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics