A Ti:sapphire planar waveguide laser grown by pulsed laser deposition

Anderson, A.A., Eason, R.W., Hickey, L.M.B., Jelínek, M., Grivas, C., Gill, D.S. and Vainos, N.A. (1997) A Ti:sapphire planar waveguide laser grown by pulsed laser deposition. Optics Letters, 22, (20), 1556-1558. (doi:10.1364/OL.22.001556).


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This paper documents the lasing performance of a waveguiding layer of Ti:sapphire, of ~12µm thickness, grown by pulsed laser deposition from a 0.12 wt % Ti2O3 Ti:sapphire single crystal target onto an undoped z-cut sapphire substrate. Lasing around 800nm is observed, when the waveguide layer is pumped by an argon ion laser, running on all blue green lines, with an absorbed power threshold of 0.56W using high reflectivity (R>98%) mirrors. Using a 5% pump duty cycle and a T = 35% output coupler, a slope efficiency of 26% with respect to absorbed power is obtained, giving quasi-CW output powers in excess of 350mW.

Item Type: Article
Digital Object Identifier (DOI): doi:10.1364/OL.22.001556
ISSNs: 0146-9592 (print)
1539-4794 (electronic)
Related URLs:
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions : University Structure - Pre August 2011 > Optoelectronics Research Centre
ePrint ID: 77952
Accepted Date and Publication Date:
Date Deposited: 11 Mar 2010
Last Modified: 31 Mar 2016 13:12
URI: http://eprints.soton.ac.uk/id/eprint/77952

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