Performance of a low loss pulsed laser deposited Nd:Gd3Ga5O12 waveguide laser at 1.06µm and 0.94µm
Bonner, C.L., Anderson, A.A., Eason, R.W., Shepherd, D.P., Gill, D.S., Grivas, C. and Vainos, N.A. (1997) Performance of a low loss pulsed laser deposited Nd:Gd3Ga5O12 waveguide laser at 1.06µm and 0.94µm. Optics Letters, 22, (13), 988-990. (doi:10.1364/OL.22.000988).
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We report the laser performance of a low propagation loss neodymium doped Gd3Ga5O12 (Nd:GGG) waveguide fabricated by pulsed laser deposition. An 8µm thick crystalline Nd:GGG film grown on an undoped Y3Al5O12 (YAG) substrate lases at 1.060µm and 1.062µm, when pumped by a Ti:sapphire laser operating at 740nm or 808nm. Using a 2.2% output coupler a 1060nm laser threshold of 4mW and a slope efficiency of 20% were observed. Laser action has also been achieved, we believe for the first time in Nd:GGG, on the quasi-three level 937nm transition. With a 2% output coupler at this wavelength a laser threshold of 17mW and a 20% slope efficiency were obtained. This demonstration of low propagation loss combined with the fact that these waveguides have a very high numerical aperture, make pulsed laser deposited thin films attractive for high power diode pumped devices.
|Subjects:||Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
|Divisions:||University Structure - Pre August 2011 > Optoelectronics Research Centre
|Date Deposited:||11 Mar 2010|
|Last Modified:||27 Mar 2014 18:58|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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