Performance of a low loss pulsed laser deposited Nd:Gd3Ga5O12 waveguide laser at 1.06µm and 0.94µm
Bonner, C.L., Anderson, A.A., Eason, R.W., Shepherd, D.P., Gill, D.S., Grivas, C. and Vainos, N.A. (1997) Performance of a low loss pulsed laser deposited Nd:Gd3Ga5O12 waveguide laser at 1.06µm and 0.94µm. Optics Letters, 22, (13), 988-990. (doi:10.1364/OL.22.000988).
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Description/Abstract
We report the laser performance of a low propagation loss neodymium doped Gd3Ga5O12 (Nd:GGG) waveguide fabricated by pulsed laser deposition. An 8µm thick crystalline Nd:GGG film grown on an undoped Y3Al5O12 (YAG) substrate lases at 1.060µm and 1.062µm, when pumped by a Ti:sapphire laser operating at 740nm or 808nm. Using a 2.2% output coupler a 1060nm laser threshold of 4mW and a slope efficiency of 20% were observed. Laser action has also been achieved, we believe for the first time in Nd:GGG, on the quasi-three level 937nm transition. With a 2% output coupler at this wavelength a laser threshold of 17mW and a 20% slope efficiency were obtained. This demonstration of low propagation loss combined with the fact that these waveguides have a very high numerical aperture, make pulsed laser deposited thin films attractive for high power diode pumped devices.
| Item Type: | Article |
|---|---|
| ISSNs: | 0146-9592 (print) 1539-4794 (electronic) |
| Related URLs: | |
| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | University Structure - Pre August 2011 > Optoelectronics Research Centre |
| Item ID: | 78003 |
| Date Deposited: | 11 Mar 2010 |
| Last Modified: | 27 Jul 2012 10:59 |
| Contributors: | Bonner, C.L. (Author) Anderson, A.A. (Author) Eason, R.W. (Author) Shepherd, D.P. (Author) Gill, D.S. (Author) Grivas, C. (Author) Vainos, N.A. (Author) |
| Date: | 1997 |
| Status: | Published |
| URI: | http://eprints.soton.ac.uk/id/eprint/78003 |
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