Performance of a low loss pulsed laser deposited Nd:Gd3Ga5O12 waveguide laser at 1.06µm and 0.94µm
Bonner, C.L., Anderson, A.A., Eason, R.W., Shepherd, D.P., Gill, D.S., Grivas, C. and Vainos, N.A. (1997) Performance of a low loss pulsed laser deposited Nd:Gd3Ga5O12 waveguide laser at 1.06µm and 0.94µm. Optics Letters, 22, (13), 988-990. (doi:10.1364/OL.22.000988)
Download
Full text not available from this repository.
Description/Abstract
We report the laser performance of a low propagation loss neodymium doped Gd3Ga5O12 (Nd:GGG) waveguide fabricated by pulsed laser deposition. An 8µm thick crystalline Nd:GGG film grown on an undoped Y3Al5O12 (YAG) substrate lases at 1.060µm and 1.062µm, when pumped by a Ti:sapphire laser operating at 740nm or 808nm. Using a 2.2% output coupler a 1060nm laser threshold of 4mW and a slope efficiency of 20% were observed. Laser action has also been achieved, we believe for the first time in Nd:GGG, on the quasi-three level 937nm transition. With a 2% output coupler at this wavelength a laser threshold of 17mW and a 20% slope efficiency were obtained. This demonstration of low propagation loss combined with the fact that these waveguides have a very high numerical aperture, make pulsed laser deposited thin films attractive for high power diode pumped devices.
| Item Type: | Article |
|---|---|
| Additional Information: | |
| ISSN: | 0146-9592 (print) 1539-4794 (electronic) |
| Related URLs: | http://www.orc.soton.ac.uk/vie...l?pid=1365 |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
| Divisions: | University Structure - Pre August 2011 > Optoelectronics Research Centre |
| ePrint ID: | 78003 |
| URI: | http://eprints.soton.ac.uk/id/eprint/78003 |
| Deposited On: | 11 Mar 2010 |
| Last Modified: | 02 Mar 2012 12:01 |
Associated Staff Only: edit my ePrint
