Growth of Ti:sapphire single crystal thin films by pulsed laser deposition

Anderson, Andrew A., Eason, Robert W., Jelínek, Miroslav, Grivas, Christos, Lane, David, Rogers, Keith, Hickey, L.M.B. and Fotakis, Costas (1997) Growth of Ti:sapphire single crystal thin films by pulsed laser deposition. Thin Solid Films, 300, (1-2), 68-71. (doi:10.1016/S0040-6090(96)09455-2).


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This paper documents the growth of single crystal Ti:sapphire thin films, typically 10µm thick, on undoped sapphire substrates using Pulsed Laser Deposition from a Ti:sapphire single crystal target with a doping level of 0.1 % wt Ti2O3. These thin films are shown to have very high crystal quality using Ion Beam Channelling and X-Ray Diffraction Techniques. The degree of titanium incorporation into the films is investigated using Inductively Coupled Plasma Mass Spectrometry and Particle Induced X-ray Emission. These techniques show that levels of up to 0.08% wt Ti2O3 are present in the deposited layers.

Item Type: Article
Digital Object Identifier (DOI): doi:10.1016/S0040-6090(96)09455-2
ISSNs: 0040-6090
Related URLs:
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions : University Structure - Pre August 2011 > Optoelectronics Research Centre
ePrint ID: 78062
Accepted Date and Publication Date:
May 1997Published
Date Deposited: 11 Mar 2010
Last Modified: 31 Mar 2016 13:12

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