Direct measurement of carrier spin relaxation times in opaque solids using the specular inverse Faraday effect
Bungay, A.R., Popov, S.V., Shatwell, I.R. and Zheludev, N.I. (1997) Direct measurement of carrier spin relaxation times in opaque solids using the specular inverse Faraday effect. Physics Letters A, 234, (5), 379-383. (doi:10.1016/S0375-9601(97)00527-6 ).
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Description/Abstract
Using a spectroscopic technique based on the transient specular inverse Faraday effect (SIFE) we found the electron spin relaxation time in bulk GaAs at room temperature to be 11 ± 1 ps. The hole spin dynamics gives a SIFE signal of the opposite sign and may be resolved in the time-domain
| Item Type: | Article |
|---|---|
| ISSNs: | 0375-9601 |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
| Divisions: | University Structure - Pre August 2011 > Optoelectronics Research Centre |
| Item ID: | 78191 |
| Date Deposited: | 11 Mar 2010 |
| Last Modified: | 10 Aug 2012 23:48 |
| Contributors: | Bungay, A.R. (Author) Popov, S.V. (Author) Shatwell, I.R. (Author) Zheludev, N.I. (Author) |
| Date: | October 1997 |
| Status: | Published |
| URI: | http://eprints.soton.ac.uk/id/eprint/78191 |
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