Direct measurement of carrier spin relaxation times in opaque solids using the specular inverse Faraday effect


Bungay, A.R., Popov, S.V., Shatwell, I.R. and Zheludev, N.I. (1997) Direct measurement of carrier spin relaxation times in opaque solids using the specular inverse Faraday effect. Physics Letters A, 234, (5), 379-383. (doi:10.1016/S0375-9601(97)00527-6 ).

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Description/Abstract

Using a spectroscopic technique based on the transient specular inverse Faraday effect (SIFE) we found the electron spin relaxation time in bulk GaAs at room temperature to be 11 ± 1 ps. The hole spin dynamics gives a SIFE signal of the opposite sign and may be resolved in the time-domain

Item Type: Article
ISSNs: 0375-9601
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
Divisions: University Structure - Pre August 2011 > Optoelectronics Research Centre
ePrint ID: 78191
Date Deposited: 11 Mar 2010
Last Modified: 27 Mar 2014 18:58
URI: http://eprints.soton.ac.uk/id/eprint/78191

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