Emission at 1.3 microns from dysprosium-doped Ga:La:S glass
Hewak, D.W., Samson, B.N., Medeiros-Neto, J.A., Laming, R.I. and Payne, D.N. (1994) Emission at 1.3 microns from dysprosium-doped Ga:La:S glass. Electronics Letters, 30, (12), 968-970.
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The potential for optical amplification at 1.3 µm is demonstrated in a dysprosium-doped gallium-lanthanum-sulphide based glass. Lifetimes of 59µs are observed for the 6H(9/2) - 6H(15/2) transition for which the emission peaks at 1.32µm. A radiative lifetime of 203µs is calculated by a Judd-Ofelt analysis, indicating a total radiative quantum efficiency of 29%. A pump absorption cross-section 20 times greater than Pr3+ suggests that shorter fibre devices may be possible.
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
|Divisions:||University Structure - Pre August 2011 > Optoelectronics Research Centre
|Date Deposited:||11 Mar 2010|
|Last Modified:||27 Mar 2014 18:58|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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