Emission at 1.3 microns from dysprosium-doped Ga:La:S glass

Hewak, D.W., Samson, B.N., Medeiros-Neto, J.A., Laming, R.I. and Payne, D.N. (1994) Emission at 1.3 microns from dysprosium-doped Ga:La:S glass. Electronics Letters, 30, (12), 968-970. (doi:10.1049/el:19940645).


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The potential for optical amplification at 1.3 µm is demonstrated in a dysprosium-doped gallium-lanthanum-sulphide based glass. Lifetimes of 59µs are observed for the 6H(9/2) - 6H(15/2) transition for which the emission peaks at 1.32µm. A radiative lifetime of 203µs is calculated by a Judd-Ofelt analysis, indicating a total radiative quantum efficiency of 29%. A pump absorption cross-section 20 times greater than Pr3+ suggests that shorter fibre devices may be possible.

Item Type: Article
Digital Object Identifier (DOI): doi:10.1049/el:19940645
ISSNs: 0013-5194 (print)
Related URLs:
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions : University Structure - Pre August 2011 > Optoelectronics Research Centre
ePrint ID: 78230
Accepted Date and Publication Date:
Date Deposited: 11 Mar 2010
Last Modified: 09 Aug 2016 16:18
URI: http://eprints.soton.ac.uk/id/eprint/78230

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