All-optical high gain transistor action using second-order nonlinearities


Russell, P.St.J. (1993) All-optical high gain transistor action using second-order nonlinearities. Electronics Letters, 29, (13), 1228-1229. (doi:10.1049/el:19930820).

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Original Publication URL: http://dx.doi.org/10.1049/el:19930820

Description/Abstract

It is shown that the output stage of a phase-matched frequency doubler is highly sensitive to the phase and amplitude of a weak injected second harmonic signal. Such devices may be regarded as all-optical transistors with very high small signal gain, resulting in strong modulation of the pump light. Gains as high as 60dB appear to be experimentally feasible in the recently reported highly efficient quasi-phase-matched frequency doublers formed by periodic domain inversion in LiNbO3-optic host crystal.

Item Type: Article
ISSNs: 0013-5194 (print)
Related URLs:
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
Divisions: University Structure - Pre August 2011 > Optoelectronics Research Centre
ePrint ID: 78271
Date Deposited: 11 Mar 2010
Last Modified: 27 Mar 2014 18:58
URI: http://eprints.soton.ac.uk/id/eprint/78271

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