Characterisation of Ga-La-S chalcogenide glass thin film optical waveguides, fabricated by pulsed laser deposition
Gill, D.S., Eason, R.W., Zaldo, C., Rutt, H.N. and Vainos, N.A. (1995) Characterisation of Ga-La-S chalcogenide glass thin film optical waveguides, fabricated by pulsed laser deposition. Journal of Non-Crystalline Solids, 191, (3), 321-326. (doi:10.1016/0022-3093(95)00319-3).
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The fabrication of stoichiometric thin-film optical waveguides of Ga-La-S via a pulsed laser deposition technique is reported. Stoichiometric films are grown by ablating Ga-La-S bulk glass with a KrF excimer laser (lambda=248 nm) at an incident laser flux >/= 3.5 J/cm^2. The composition of the films is determined by energy-dispersive X-ray analysis and the refractive index is measured by a dark-mode prism coupling technique. Photoinduced structural rearrangement of the as-deposited films leads to a blueshift in the visible absorption edge and a permanent refractive index change, Deltan, of -1%. On the basis of these results, grating structures have been written with both blue light, and e-beam addressing, and their suitability for integrated optical structures assessed
|Digital Object Identifier (DOI):||doi:10.1016/0022-3093(95)00319-3|
|Subjects:||Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
|Divisions:||University Structure - Pre August 2011 > Optoelectronics Research Centre
|Date Deposited:||11 Mar 2010|
|Last Modified:||27 Mar 2014 18:58|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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