Kinetic analysis of the new sensitization effect in the TL of silica optical fibres
Kirsh, Y., Townsend, J.E. and Townsend, P.D. (1989) Kinetic analysis of the new sensitization effect in the TL of silica optical fibres. Physica Status Solidi (A), 114, (2), 739-747. (doi:10.1002/pssa.2211140238).
The kinetic parameters of the thermoluminescence induced by X-irradiation in Ge-silica optical fibres doped with Nd, are investigated. Initially the emission spectrum consists mainly of a band near 400 nm. The combined effect, of irradiation and heating generates a new band, near 520 nm. The kinetic analysis shows that besides the broad distribution of activation energies which is typical of the amorphous silica, several monoenergetic traps are active as well. The shallower trap can be linked to the well known "110 °C peak" of quartz. It is suggested that the recombination of electrons with O2' hole centres produce the 400 nm emission while the 520 nm hand is associated with a Nd3+ hole centre. Ge4+ is assumed to be the dominant electron trap.
|Subjects:||Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
|Divisions:||University Structure - Pre August 2011 > Optoelectronics Research Centre
|Date Deposited:||11 Mar 2010|
|Last Modified:||31 Jul 2012 16:20|
|Contributors:||Kirsh, Y. (Author)
Townsend, J.E. (Author)
Townsend, P.D. (Author)
|Date:||16 August 1989|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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