Indium tin oxide films by sequential evaporation
Yao, J.L., Hao, S. and Wilkinson, J.S. (1990) Indium tin oxide films by sequential evaporation. Thin Solid Films, 189, (2), 227-233. (doi:10.1016/0040-6090(90)90451-I).
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In this paper, a method for preparing thin (16 nm) indium tin oxide (ITO) films for opto-electronic applications using sequential reactive evaporation followed by annealing is described. This method has the advantage of accurate composition control and low cost. An electrical resistivity of 4.0 x 10^-5 Omega m and optical transparency greater than 90% have been obtained. The optical attenuation caused by the films deposited on top of ion-exchanged optical waveguides has been measured. This method has also been used for preparing thicker ITO films.
|Subjects:||Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
|Divisions:||University Structure - Pre August 2011 > Optoelectronics Research Centre
|Date Deposited:||11 Mar 2010|
|Last Modified:||17 May 2013 01:22|
|Contributors:||Yao, J.L. (Author)
Hao, S. (Author)
Wilkinson, J.S. (Author)
|Date:||15 August 1990|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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