Indium tin oxide films by sequential evaporation
Yao, J.L., Hao, S. and Wilkinson, J.S. (1990) Indium tin oxide films by sequential evaporation. Thin Solid Films, 189, (2), 227-233. (doi:10.1016/0040-6090(90)90451-I).
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Description/Abstract
In this paper, a method for preparing thin (16 nm) indium tin oxide (ITO) films for opto-electronic applications using sequential reactive evaporation followed by annealing is described. This method has the advantage of accurate composition control and low cost. An electrical resistivity of 4.0 x 10^-5 Omega m and optical transparency greater than 90% have been obtained. The optical attenuation caused by the films deposited on top of ion-exchanged optical waveguides has been measured. This method has also been used for preparing thicker ITO films.
| Item Type: | Article |
|---|---|
| ISSNs: | 0040-6090 (print) |
| Related URLs: | |
| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | University Structure - Pre August 2011 > Optoelectronics Research Centre |
| Item ID: | 78429 |
| Date Deposited: | 11 Mar 2010 |
| Last Modified: | 17 May 2013 01:22 |
| Contributors: | Yao, J.L. (Author) Hao, S. (Author) Wilkinson, J.S. (Author) |
| Date: | 15 August 1990 |
| Status: | Published |
| URI: | http://eprints.soton.ac.uk/id/eprint/78429 |
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