Indium tin oxide films by sequential evaporation


Yao, J.L., Hao, S. and Wilkinson, J.S. (1990) Indium tin oxide films by sequential evaporation. Thin Solid Films, 189, (2), 227-233. (doi:10.1016/0040-6090(90)90451-I).

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Description/Abstract

In this paper, a method for preparing thin (16 nm) indium tin oxide (ITO) films for opto-electronic applications using sequential reactive evaporation followed by annealing is described. This method has the advantage of accurate composition control and low cost. An electrical resistivity of 4.0 x 10^-5 Omega m and optical transparency greater than 90% have been obtained. The optical attenuation caused by the films deposited on top of ion-exchanged optical waveguides has been measured. This method has also been used for preparing thicker ITO films.

Item Type: Article
ISSNs: 0040-6090 (print)
Related URLs:
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: University Structure - Pre August 2011 > Optoelectronics Research Centre
ePrint ID: 78429
Date Deposited: 11 Mar 2010
Last Modified: 27 Mar 2014 18:59
URI: http://eprints.soton.ac.uk/id/eprint/78429

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