Indium tin oxide films by sequential evaporation

Yao, J.L., Hao, S. and Wilkinson, J.S. (1990) Indium tin oxide films by sequential evaporation. Thin Solid Films, 189, (2), 227-233. (doi:10.1016/0040-6090(90)90451-I).


Full text not available from this repository.


In this paper, a method for preparing thin (16 nm) indium tin oxide (ITO) films for opto-electronic applications using sequential reactive evaporation followed by annealing is described. This method has the advantage of accurate composition control and low cost. An electrical resistivity of 4.0 x 10^-5 Omega m and optical transparency greater than 90% have been obtained. The optical attenuation caused by the films deposited on top of ion-exchanged optical waveguides has been measured. This method has also been used for preparing thicker ITO films.

Item Type: Article
Digital Object Identifier (DOI): doi:10.1016/0040-6090(90)90451-I
ISSNs: 0040-6090 (print)
Related URLs:
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions : University Structure - Pre August 2011 > Optoelectronics Research Centre
ePrint ID: 78429
Accepted Date and Publication Date:
15 August 1990Published
Date Deposited: 11 Mar 2010
Last Modified: 31 Mar 2016 13:13

Actions (login required)

View Item View Item