Growth of KNbO3 thin films on MgO by pulsed laser deposition

Zaldo, C., Gill, D.S., Eason, R.W., Mendiola, J. and Chandler, P.J. (1994) Growth of KNbO3 thin films on MgO by pulsed laser deposition. Applied Physics Letters, 65, (4), 502-504. (doi:10.1063/1.112280).


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Crystalline and stoichiometric KNbO3 thin films have been grown on (100) oriented MgO substrates by pulsed laser deposition technique. Electron microprobe analysis and Rutherford backscattering spectroscopy of the films show a progressive loss of K with increasing substrate-target distance. To compensate for this K loss the ceramic KNbO3 targets were enriched with K2CO3 powder, pressed at room temperature and sintered at 650°C. For a substrate-target distance of 6 cm, targets with [K]/[Nbl molar ratio = 2.85 yield stoichiometric KNbO3 films. A partial oxygen pressure of 2 x mbar was optimum for growing transparent films. Films grown between 650 and 700°C show the KNbO3 crystalline phase with its (110) axis preferentially oriented perpendicular to the surface of the substrate. At these temperatures KNbO3 diffusion into the MgO substrate is observed. Films grown from KNbO3 single crystal targets only contain a Mg4Nb2O9 crystalline layer.

Item Type: Article
Digital Object Identifier (DOI): doi:10.1063/1.112280
ISSNs: 0003-6951 (print)
Related URLs:
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions : University Structure - Pre August 2011 > Optoelectronics Research Centre
ePrint ID: 78437
Accepted Date and Publication Date:
Date Deposited: 11 Mar 2010
Last Modified: 31 Mar 2016 13:13

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