Quasi-three-level 1.03µm laser operation of a planar ion implanted Yb:YAG waveguide
Hanna, D.C., Jones, J.K., Large, A.C., Shepherd, D.P., Tropper, A.C., Chandler, P.J., Rodman, M.J., Townsend, P.D. and Zhang, L. (1993) Quasi-three-level 1.03µm laser operation of a planar ion implanted Yb:YAG waveguide. Optics Communications, 99, (3-4), 211-215. (doi:10.1016/0030-4018(93)90081-F).
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The first laser operation of an Yb:YAG waveguide is reported. Room temperature, continuous wave operation was achieved at a threshold of 30 mW. Projected thresholds of a few milliwatts for a channel waveguide indicate that for quasi-three level lasers. a waveguide configuration, even if lossy, can be highly beneficial.
|Subjects:||Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
|Divisions:||University Structure - Pre August 2011 > Optoelectronics Research Centre
|Date Deposited:||11 Mar 2010|
|Last Modified:||02 Mar 2012 12:01|
|Contributors:||Hanna, D.C. (Author)
Jones, J.K. (Author)
Large, A.C. (Author)
Shepherd, D.P. (Author)
Tropper, A.C. (Author)
Chandler, P.J. (Author)
Rodman, M.J. (Author)
Townsend, P.D. (Author)
Zhang, L. (Author)
|Date:||1 June 1993|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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