Quasi-three-level 1.03µm laser operation of a planar ion implanted Yb:YAG waveguide


Hanna, D.C., Jones, J.K., Large, A.C., Shepherd, D.P., Tropper, A.C., Chandler, P.J., Rodman, M.J., Townsend, P.D. and Zhang, L. (1993) Quasi-three-level 1.03µm laser operation of a planar ion implanted Yb:YAG waveguide. Optics Communications, 99, (3-4), 211-215. (doi:10.1016/0030-4018(93)90081-F).

Download

Full text not available from this repository.

Description/Abstract

The first laser operation of an Yb:YAG waveguide is reported. Room temperature, continuous wave operation was achieved at a threshold of 30 mW. Projected thresholds of a few milliwatts for a channel waveguide indicate that for quasi-three level lasers. a waveguide configuration, even if lossy, can be highly beneficial.

Item Type: Article
ISSNs: 0030-4018 (print)
1873-0310 (electronic)
Related URLs:
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: University Structure - Pre August 2011 > Optoelectronics Research Centre
ePrint ID: 78482
Date Deposited: 11 Mar 2010
Last Modified: 27 Mar 2014 18:59
URI: http://eprints.soton.ac.uk/id/eprint/78482

Actions (login required)

View Item View Item