Low threshold quasi-three-level 946nm laser operation of an epitaxially grown Nd:YAG waveguide
Hanna, D.C., Large, A.C., Shepherd, D.P., Tropper, A.C., Chartier, I., Ferrand, B. and Pelenc, D. (1993) Low threshold quasi-three-level 946nm laser operation of an epitaxially grown Nd:YAG waveguide. Applied Physics Letters, 63, 7-9. (doi:10.1063/1.109703).
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Description/Abstract
We report the 946 nm laser operation of an epitaxially grown Nd:YAG planar waveguide. The incident and absorbed power thresholds of 4 and 1.2 mW, respectively, are lower than those reported for bulk lasers when using a similar experimental setup. We also report the use of Ga doping of the active layer to increase the refractive index difference to allow the production of very small guiding layers.
| Item Type: | Article |
|---|---|
| ISSNs: | 0003-6951 (print) |
| Related URLs: | |
| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | University Structure - Pre August 2011 > Optoelectronics Research Centre |
| Item ID: | 78501 |
| Date Deposited: | 11 Mar 2010 |
| Last Modified: | 02 Mar 2012 11:23 |
| Contributors: | Hanna, D.C. (Author) Large, A.C. (Author) Shepherd, D.P. (Author) Tropper, A.C. (Author) Chartier, I. (Author) Ferrand, B. (Author) Pelenc, D. (Author) |
| Date: | 1993 |
| Status: | Published |
| URI: | http://eprints.soton.ac.uk/id/eprint/78501 |
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