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Photorefractive techniques for diode laser beam combination

Photorefractive techniques for diode laser beam combination
Photorefractive techniques for diode laser beam combination
Techniques for high-power laser array beam combination processes involving photorefractive materials are reviewed. Details of an all semiconductor laser scheme for the amplification and subsequent photorefractive beam clean-up of a diffraction limited single-mode laser output is presented. Powers in excess of 100 mW ( > 220 mW accounting for Fresnel losses) are obtained in a diffraction limited signal beam, corresponding to an array to diffraction limited beam transfer efficiency of 33%. Details of the reflection geometry phase conjugate master oscillator-power amplifier scheme which offers the possibility of power scaling between a number of high-power semiconductor laser amplifiers are presented. Using this technique, a 13-dB amplification of a diffraction limited signal beam is obtained using a commercially available, 10-stripe gain-guided device with no special coatings.
0218-8635
431-455
MacCormack, S.
558a86d2-53a2-46cf-89b4-f3a3f5b26bc0
Eason, R.W.
e38684c3-d18c-41b9-a4aa-def67283b020
MacCormack, S.
558a86d2-53a2-46cf-89b4-f3a3f5b26bc0
Eason, R.W.
e38684c3-d18c-41b9-a4aa-def67283b020

MacCormack, S. and Eason, R.W. (1992) Photorefractive techniques for diode laser beam combination. Journal of Nonlinear Optical Physics and Materials, 1 (2), 431-455. (doi:10.1142/S0218199192000212).

Record type: Article

Abstract

Techniques for high-power laser array beam combination processes involving photorefractive materials are reviewed. Details of an all semiconductor laser scheme for the amplification and subsequent photorefractive beam clean-up of a diffraction limited single-mode laser output is presented. Powers in excess of 100 mW ( > 220 mW accounting for Fresnel losses) are obtained in a diffraction limited signal beam, corresponding to an array to diffraction limited beam transfer efficiency of 33%. Details of the reflection geometry phase conjugate master oscillator-power amplifier scheme which offers the possibility of power scaling between a number of high-power semiconductor laser amplifiers are presented. Using this technique, a 13-dB amplification of a diffraction limited signal beam is obtained using a commercially available, 10-stripe gain-guided device with no special coatings.

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Published date: 1992

Identifiers

Local EPrints ID: 78513
URI: http://eprints.soton.ac.uk/id/eprint/78513
ISSN: 0218-8635
PURE UUID: f7b06c81-6515-4adf-8ca8-7e1925c1c498
ORCID for R.W. Eason: ORCID iD orcid.org/0000-0001-9704-2204

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Date deposited: 11 Mar 2010
Last modified: 14 Mar 2024 02:33

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Contributors

Author: S. MacCormack
Author: R.W. Eason ORCID iD

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