Optically written waveguides in ion implanted Bi4Ge3O12

Brocklesby, W.S., Field, S.J., Hanna, D.C., Large, A.C., Lincoln, J.R., Shepherd, D.P., Tropper, A.C., Chandler, P.J., Townsend, P.D., Zhang, L., Feng, X.Q. and Hu, Q. (1992) Optically written waveguides in ion implanted Bi4Ge3O12. Optical Materials, 1, (3), 177-184. (doi:10.1016/0925-3467(92)90026-J).


Full text not available from this repository.


We report the first observation of optically written channel waveguides in ion implanted Bi4Ge3O12 (BGO). Raman spectroscopy has been used to investigate the changes occurring due to both the original ion implantation and the subsequent optical writing of channel waveguides

Item Type: Article
Digital Object Identifier (DOI): doi:10.1016/0925-3467(92)90026-J
ISSNs: 0925-3467
Related URLs:
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions : University Structure - Pre August 2011 > Optoelectronics Research Centre
ePrint ID: 78526
Accepted Date and Publication Date:
September 1992Published
Date Deposited: 11 Mar 2010
Last Modified: 31 Mar 2016 13:13
URI: http://eprints.soton.ac.uk/id/eprint/78526

Actions (login required)

View Item View Item