Magnetic g-factor of electrons in GaAs/AlGaAs quantum wells

Snelling, M.J., Flinn, G.P., Plaut, A.S., Harley, R.T., Tropper, A.C., Eccleston, R. and Phillips, C.C. (1991) Magnetic g-factor of electrons in GaAs/AlGaAs quantum wells. Physical Review B, 44, (20), 11345-11352.


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The magnitude and sign of the effective magnetic splitting factor g* for conduction electrons in GaAs/AlxGa(1-x)As quantum wells have been determined as a function of well width down to 5 nm. The experimental method is based on combined measurements of the decay time of photoluminescence and of the suppression of its circular polarization under polarized optical pumping in a magnetic field perpendicular to the growth axis (Hanle effect). Measurements as a function of hole sheet density in the wells reveal a transition from excitonic behavior with very small apparent g value for low density, to larger absolute values characteristic of free electrons at higher densities. For 20-nm wells g* for electrons is close to the bulk value (-0.44), and increases for narrower wells passing through zero for well width close to 5.5 nm. A theoretical analysis based on three-band k.p theory, including allowance for conduction-band nonparabolicity and for wave-function penetration into the barriers, gives a reasonable representation of the data, leading to the conclusion that g* in quantum wells has a value close to that of electrons in the bulk at the confinement energy above the band minimum.

Item Type: Article
ISSNs: 1098-0121 (print)
1550-235X (electronic)
Related URLs:
Subjects: Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions : University Structure - Pre August 2011 > Optoelectronics Research Centre
ePrint ID: 78552
Accepted Date and Publication Date:
Date Deposited: 11 Mar 2010
Last Modified: 31 Mar 2016 13:13

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