Low threshold ion-implanted Nd:YAG channel waveguide laser
Field, S.J., Hanna, D.C., Large, A.C., Shepherd, D.P., Tropper, A.C., Chandler, P.J., Townsend, P.D. and Zhang, L. (1991) Low threshold ion-implanted Nd:YAG channel waveguide laser. Electronics Letters, 27, (25), 2375-2376. (doi:10.1049/el:19911470).
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The first channel waveguide laser in Nd:YAG showing a threshold reduction of 20 times compared to a planar waveguide is described. With diode pumping this ion-implanted waveguide laser has been operated with absorbed power thresholds as low as ~500µW in good agreement with theoretical expectation. Output slope efficiencies of ~29% have also been demonstrated.
|Subjects:||T Technology > TK Electrical engineering. Electronics Nuclear engineering
Q Science > QC Physics
|Divisions:||University Structure - Pre August 2011 > Optoelectronics Research Centre
|Date Deposited:||11 Mar 2010|
|Last Modified:||27 Mar 2014 18:59|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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