Epitaxial growth of Bi12GeO20 thin film optical waveguides using excimer laser ablation
Youden, K.E., Eason, R.W., Gower, M.C. and Vainos, N.A. (1991) Epitaxial growth of Bi12GeO20 thin film optical waveguides using excimer laser ablation. Applied Physics Letters, 59, 1929-1931. (doi:10.1063/1.106162).
Thin-film optical waveguides of the photorefractive optical material bismuth germanium oxide (Bi12GeO20) have been epitaxially grown onto heated zirconia substrates by excimer laser ablative sputtering. The epitaxial nature and stoichiometry of the films were verified using x-ray diffraction analysis. Waveguide modes were observed for effective refractive indices in close agreement with theoretical predictions.
|Subjects:||Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
|Divisions:||University Structure - Pre August 2011 > Optoelectronics Research Centre
|Date Deposited:||11 Mar 2010|
|Last Modified:||02 Mar 2012 12:02|
|Contributors:||Youden, K.E. (Author)
Eason, R.W. (Author)
Gower, M.C. (Author)
Vainos, N.A. (Author)
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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