Photochemical holeburning in polycrystalline and neutron irradiated NaF
Ortiz, C., Alfonso, C.B., Shelby, R.M., Tropper, A.C. and Bjorklund, G.C. (1984) Photochemical holeburning in polycrystalline and neutron irradiated NaF. Physica Status Solidi (b), 123, (1), 79-84. (doi:10.1002/pssb.2221230109).
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Spectroscopic properties of aggregate color centers in polycrystalline NaF thin films are measured for the first time by photochemical holeburning. A comparison with single crystals shows that the density of the color centers, and both the inhomogeneous linewidth and holewidth are increased in the polycrystalline material. Also studied are the effects of two different irradiation sources (neutrons and X-rays) in single crystal samples. The excited state lifetime T1 of the 6070 Å centers is found to be very similar in all the samples.
|Subjects:||Q Science > QC Physics
T Technology > TK Electrical engineering. Electronics Nuclear engineering
|Divisions:||University Structure - Pre August 2011 > Optoelectronics Research Centre
|Date Deposited:||11 Mar 2010|
|Last Modified:||02 Mar 2012 12:02|
|Contributors:||Ortiz, C. (Author)
Alfonso, C.B. (Author)
Shelby, R.M. (Author)
Tropper, A.C. (Author)
Bjorklund, G.C. (Author)
|Date:||1 May 1984|
|RDF:||RDF+N-Triples, RDF+N3, RDF+XML, Browse.|
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